R5016ANX

Vgs(th) (Max) @ Id:	4.5V @ 1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FM
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	270 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Bulk

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R5016ANX Application Field and Working Principle

Transistors are a type of electronic semiconductor device that are widely used in modern electronics for their ability to switch between two different electrical states and for their ability to amplify electrical signals. Among transistors, FETs, or Filed-Effect Transistors, are widely used due to their low input impedance and fast switching speed. MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are a subset of FETs that take advantage of the metal oxide layer that covers the gate terminal. The R5016ANX is a single MOSFET device that is used in a variety of applications in the electronics industry.The R5016ANX is a single N-channel MOSFET that is manufactured using CMOS complected logic level enhancement mode technology. It is rated at a drain source voltage of 300V with peak drain current of 8A providing maximum power dissipation of 300W. The input gate voltage range is from -10V to +20V and the drain-source breakdown voltage (BVds) is greater than 300V. The device is also rated for a high temperature operation of 125°C with a maximum junction temperature of 150°C.The R5016 ANX is primarily used for power switching and power control applications that require high switching speeds and low on-state resistance. This type of transistor works in the enhancement mode, meaning that the transistor will remain OFF until the gate is given a positive voltage. When the gate voltage exceeds the threshold voltage, the device turns ON, thus providing a path between the drain and source. The device itself is a three-terminal device where the source is the main contact, the gate is controlled by the voltage and the body is connected to the source.In terms of working principle, when the voltage on the gate of an N-Channel FET is more positive than the source, electrons are attracted to the gate, giving it a negative charge. This negative charge is then transferred to the oxide layer, forming a depletion zone and thus creating a barrier between the source and drain. As the gate voltage is increased, the barrier decreases and more current can pass from the drain to the source. This is known as the “pinch-off” mode.The R5016ANX is a versatile device that can be used for a variety of applications in the electronics industry such as switchgear protection circuits, high power DC to DC converters and motor control circuits. Due to its low on-state resistance capability, fast switching speed and high temperature operation it is well suited for use in automotive and industrial applications. In addition, its high power dissipation of 300W makes it an ideal choice for power electronic applications. As such, the R5016ANX is fast becoming an essential component in the electronics industry.

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