R5011FNJTL Discrete Semiconductor Products

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The R5011FNJTL is an N-channel single-gate MOS Field Effect Transistor. It is a vertical MOSFET produced by ROHM Semiconductor and is used in various applications such as power conversion, motor control, inverters, and digital circuits. The R5011FNJTL is built on an ultra-small package size which enables it to fit into extremely limited-space designs.

The R5011FNJTL is composed of a metal source, gate, and drain construction, all of which are vertical. It is fabricated using a proprietary silicon process for high quality and high performance. The mobile electrons are induced through a thin gate oxide layer formed between the metal source and gate. This provides a high degree of control over the gate-source voltage, allowing the user to adjust the threshold voltage.

The R5011FNJTL has a nominal drain to source breakdown voltage of 75V, making it especially suitable for high-voltage operations. It also has a drain current capability of up to 10A, making it suitable for high power applications. In addition, it has an operating temperature range of -55 to 150 °C and an on-state drain current limited by RDSon as low as 0.002 Ω. The R5011FNJTL can also be used as a low resistance switch, with its fast switching speed being one of its main advantages.

The R5011FNJTL is primarily used for its high voltage and high current handling capabilities. It can be used in power conversion applications such as in AC-DC and DC-DC converters. It is also used for motor control due to its low resistance switching and fast response. Moreover, its low on-state resistance allows it to handle large pulses of current and voltage, making it suitable for inverter applications. In addition, its high-speed response also makes it useful for digital circuits such as switching power supplies.

The working principle of the R5011FNJTL is based on the basic principle of operation of all field effect transistors. When a voltage is applied to the gate of the MOSFET, the gate-source voltage creates a void between the source and the gate, leading to a depletion region. This depletion region inhibits the flow of current through the channel and prevents conduction. When the gate temperature rises, it allows more electrons to flow through the channel, leading to conduction. In this way, the R5011FNJTL can be used to adjust the current flow, allowing for accurate control of the power switch.

In conclusion, the R5011FNJTL is an N-channel single-gate MOS Field Effect Transistor that is suitable for power conversion, motor control, inverters, and digital circuits due to its high voltage and current handling capabilities. It employs a thin gate oxide layer which allows for high control over the gate-source voltage and offers low on-state resistance. Furthermore, the basic principle of operation of the R5011FNJTL is based on the principle of field effect transistors.

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