RJH60A83RDPP-M0#T2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RJH60A83RDPP-M0#T2 belongs to the category of transistors called IGBT (Insulated Gate Bipolar Transistor) and is a single device. Generally, a transistor can be thought of as a switch, or an amplifier. The IGBT is different in one important way: it combines the benefits of two transistors, the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and the BJT (Bipolar Junction Transistor). On one hand, it has the high switching speed and low on-state losses of a MOSFET while on the other it has the low turn-on voltage of a BJT. This is why it is often used in power applications.

The RJH60A83RDPP-M0#T2 is intended to be used in variable-speed motor drives and inverters, for general inverter systems and for welding applications. It is able to handle a current of up to 50A and an on-state voltage of 800V. Its reverse junction is rated at 800V, ensuring that it can handle a relatively large amount of power. Its off-state gate-emitter breakdown voltage is rated at 1.5kV. It is a very efficient device with a power conversion efficiency of 96.5%.

Regarding its working principle, the IGBT combines the positive features of the MOSFET and the BJT. The IGBT has a control electrode, the gate, and two other electrodes, the collector and emitter. When gate current is applied, the N-channel MOSFET layer is turned on and a current passes through the transistor. The amount of current depends on the voltage applied and the higher the voltage, the more current that will flow. The BJT layers help to reduce the on-state voltage, resulting in higher efficiency.

The basic operation of an IGBT, such as the RJH60A83RDPP-M0#T2, involves turning the flow of current on and off by simply applying a gating signal to the gate of the device. A small current from the gate voltage is supplied to the gate and creates a barrier between the collector and emitter of the device. When the gate voltage is increased, the barrier between the collector and emitter gets reduced and the current flows through the device. This simple procedure of applying a voltage and controlling current makes the IGBT ideal for use in power applications.

In conclusion, the RJH60A83RDPP-M0#T2 is an IGBT single device designed primarily for power applications. It is capable of handling a relatively large amount of current, up to 50A, and has a relatively high efficiency. It works by applying a gating voltage to the gate of the device, which creates a barrier between the collector and emitter and allows for the controlled flow of current. Overall, this device offers high reliability and efficiency in various power applications, making it an ideal choice for a variety of tasks.

The specific data is subject to PDF, and the above content is for reference