RJH60V1BDPE-00#J3 Allicdata Electronics

RJH60V1BDPE-00#J3 Discrete Semiconductor Products

Allicdata Part #:

RJH60V1BDPE-00#J3TR-ND

Manufacturer Part#:

RJH60V1BDPE-00#J3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 16A 52W LDPAK
More Detail: IGBT Trench 600V 16A 52W Surface Mount 4-LDPAK
DataSheet: RJH60V1BDPE-00#J3 datasheetRJH60V1BDPE-00#J3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: RJH60V
Supplier Device Package: 4-LDPAK
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 300V, 8A, 5 Ohm, 15V
Td (on/off) @ 25°C: 30ns/55ns
Gate Charge: 19nC
Series: --
Switching Energy: 17µJ (on), 110µJ (off)
Power - Max: 52W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJP60V1BDPE-00#J3 IGBT is an insulated-gate bipolar Transistor (IGBT) specially designed for medium to high power applications. It is a single transistor with a package size of 60A (360V). It is well suited for switching applications such as motor drivers or power supplies. It can also be used for AC control and rectification.

The RJP60V1BDPE-00#J3 IGBT is constructed using the latest technology, allowing it to achieve a high switching speed, low on-resistance, and low power losses. This device is designed to operate in a wide range of temperature conditions, making it suitable for a variety of applications. The on-resistance of the device is low, which is an advantage in applications where power dissipation is a key factor to consider.

At the heart of the device is an insulated gate electrode which provides field effect control of current flow. The gate is insulated from the body to prevent leakage current and is combined with the base material to create a high performance semiconductor device. The gate electrode is also connected to a power supply and the collector to form the device. The voltage applied to the gate can be used to control the current flow through the device.

The basic operation of an IGBT is similar to that of a bipolar junction transistor (BJT). In both devices, a current flows between the collector and emitter and is controlled by the voltage applied to the gate. In IGBTs, the gate is insulated so the current is controlled by an electric field instead of the base-emitter voltage. This enables an IGBT to switch quickly and accurately.

The RJP60V1BDPE-00#J3 IGBT is an ideal choice for medium to high power applications. It offers a wide temperature range, low on-resistance, and low power losses. The insulated gate gives it superior switching performance, allowing it to be used in many switching and AC control applications. With its robust construction and high performance, the RJP60V1BDPE-00#J3 IGBT is a versatile and reliable device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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