
Allicdata Part #: | RJH60D2DPP-M0#T2-ND |
Manufacturer Part#: |
RJH60D2DPP-M0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 600V 25A 27.2W TO220FL |
More Detail: | IGBT Trench 600V 25A 34W Through Hole TO-220FL |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Base Part Number: | RJH60D |
Supplier Device Package: | TO-220FL |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Reverse Recovery Time (trr): | 100ns |
Test Condition: | 300V, 12A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 32ns/85ns |
Gate Charge: | 19nC |
Series: | -- |
Switching Energy: | 100µJ (on), 160µJ (off) |
Power - Max: | 34W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 12A |
Current - Collector (Ic) (Max): | 25A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The RJH60D2DPP-M0#T2 is a single-chip IGBT power module. It uses advanced IGBT technology to provide superior thermal stability and higher power density and enables better efficiency in applications requiring high power. This module is designed for efficient use in communication and industrial equipment. The module is assembled in a DIP-3 package and is ideally suited for applications requiring large current capacities.
Application Field
RJH60D2DPP-M0#T2 is an advanced IGBT power module that is well-suited for applications requiring high power and high efficiency. This module is intended for use in power switching circuits, power linearization, power factor correction and power conversion equipment. It can also be used in various motor control, LED lighting, solar energy, automotive and other power supplies in communication, medical and industrial equipment.
Working Principle
IGBTs are semiconductor devices, which are mainly used for controlling the current in the circuit. The working principle of the RJH60D2DPP-M0#T2 is based on the metal-oxide-semiconductor (MOS) process. This process consists of a junction between a metal gate and an insulated gate, which is connected to the current-carrying part of the circuit. When a voltage is applied to the gate, a current is generated at the junction, which is then passed through the circuit. The current can be controlled by adjusting the voltage applied to the gate. The IGBT operates as a switch, allowing the current to be turned on and off by controlling the gate voltage. The fast switching capability of IGBTs makes them ideal for power switching applications.
Conclusion
The RJH60D2DPP-M0#T2 is a single-chip IGBT power module that is well-suited for applications requiring high power and high efficiency. Its advanced IGBT technology provides superior thermal stability and higher power density. The module can be used in motor control, LED lighting, solar energy and automotive power supplies as well as communication, medical and industrial equipment. The working principle of the module is based on the MOS process and its fast switching capability makes it an ideal choice for power switching applications.
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