RJH60A83RDPE-00#J3 Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Lead Free Status / RoHS Status:	--
Part Status:	Discontinued at Digi-Key
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	20A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 10A
Power - Max:	52W
Switching Energy:	230µJ (on), 160µJ (off)
Input Type:	Standard
Gate Charge:	19.7nC
Td (on/off) @ 25°C:	31ns/54ns
Test Condition:	300V, 10A, 5 Ohm, 15V
Reverse Recovery Time (trr):	130ns
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-83
Supplier Device Package:	4-LDPAK
Base Part Number:	RJH60A

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RJH60A83RDPE-00#J3 Application Field and Working Principle The RJH60A83RDPE-00#J3 is a high-performance insulated gate bipolar transistor (IGBT) from Renesas Electronics. It is a single device that uses high-voltage technology, allowing for switching and logic functions in a variety of applications. Its strong insulation characteristics, low power dissipation, and high-frequency performance make it suitable for a variety of applications.The RJH60A83RDPE-00#J3 is commonly found in direct current (DC) motor systems and power semiconductor applications. It is also used in industrial and consumer electronics, such as UPS systems, induction heating, electric power tools, air conditioning and heating, white goods, and automotive applications. Additionally, the device can be used in a wide range of applications, including PWM (pulse-width modulation), AC/DC converters, and sound enhancers.The RJH60A83RDPE-00#J3 is a single IGBT device, which is a type of power transistor. It is composed of an N-channel and a P-channel MOSFETs that are both insulated from each other. The device\'s operation is based on the concept of minority carrier injection, wherein a current-controlled gate and small holes injected into the N-channel significantly increase the forward gain of the device. This gate current is supplied by a gate drive circuit, which is responsible for turning the transistor on or off in response to an input signal.When the gate drive circuit is off, the substrate is reverse biased and electrons injected into the substrate are able to pass through, creating a path of current flow. This is known as \'conductive mode\'. When the gate drive circuit is on, the substrate is forward biased and holes are injected into the substrate. This results in a decrease in the current flow, known as \'non-conductive mode\'.The RJH60A83RDPE-00#J3 is designed to provide high power gain, high-speed switching, and low leakage current. It is able to withstand high voltage stress, making it suitable for high-current applications. The device is also designed to operate over large temperature ranges, making it ideal for use in harsh environments.In conclusion, the RJH60A83RDPE-00#J3 is an insulated gate bipolar transistor (IGBT) device from Renesas Electronics. It is suitable for a wide range of applications, including power semiconductor applications, DC motor systems, UPS systems, induction heating, electric power tools, and automotive applications. The device is composed of an N-channel and a P-channel MOSFETs, which are insulated from each other. The device\'s operation is based on the concept of minority carrier injection, wherein a current-controlled gate and small holes injected into the N-channel significantly increase the forward gain of the device. The device is designed to provide high power gain, high-speed switching, and low leakage current. Additionally, it is able to withstand high voltage stress and can operate over large temperature ranges.

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