RJH60A85RDPE-00#J3 Discrete Semiconductor Products |
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Allicdata Part #: | RJH60A85RDPE-00#J3TR-ND |
Manufacturer Part#: |
RJH60A85RDPE-00#J3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 600V 30A 113W LDPAK |
More Detail: | IGBT Trench 600V 30A 113W Surface Mount 4-LDPAK |
DataSheet: | RJH60A85RDPE-00#J3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Base Part Number: | RJH60A |
Supplier Device Package: | 4-LDPAK |
Package / Case: | SC-83 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Reverse Recovery Time (trr): | 160ns |
Test Condition: | 300V, 15A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 40ns/86ns |
Gate Charge: | 56nC |
Series: | -- |
Switching Energy: | 430µJ (on), 300µJ (off) |
Power - Max: | 113W |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 15A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RJH60A85RDPE-00#J3 Application Field and Working Principle
The RJH60A85RDPE-00#J3 is a single insulated gate bipolar transistor (IGBT) which has a number of important uses and applications in the engineering world. It is one of the most popular transistor components used in modern electronic systems and devices. In this article, we will take a look at the application field and working principle of this particular IGBT model.
Application Field
RJH60A85RDPE-00#J3 is a high-power IGBT, which is suitable for high voltage and high current applications. It’s particularly suited for power conditioning, motor drives and power inverters in the industrial and military sectors. Its fast switching performance and low on-state voltage drop make it ideal for switch mode power supplies and full-bridge applications.
Other applications of RJH60A85RDPE-00#J3 include radio frequency generator and amplifier circuits, solar cells, and the load-switching of high voltage capacitive circuits. In general, this IGBT is suitable for any application requiring very high-power, reliable, fast-switching control.
Working Principle
The working principle of RJH60A85RDPE-00#J3 is based on the fact that its gate terminal can control the current flow through the device. It works by combining the advantages of both bipolar and field effect transistors and utilizing the insulated gate to control the base current of a bipolar transistor. When the gate control signal applied to the device is a positive voltage, current begins to flow through the device. On the other hand, when the gate voltage is negative, current is blocked.
RJH60A85RDPE-00#J3 is particularly suitable for high efficiency use because of its good switching performance. Its low on-state voltage drop enables the device to handle high power levels with minimal power loss in short switching cycles. In addition, its integrated over-current protection circuitry helps protect the IGBT from short circuit damage.
Conclusion
In conclusion, the RJH60A85RDPE-00#J3 is an IGBT which is designed for high-voltage and high-current applications. Its fast switching performance, low on-state voltage drop, and built-in over-current protection make it well suited for today’s demanding electronic devices and systems. Its wide range of applications include industrial and military power conditioning, motor drives, power inverters, radio frequency generator and amplifier circuits, and load-switching of high-voltage capacitive circuits.
The specific data is subject to PDF, and the above content is for reference
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