Allicdata Part #: | RJH60M2DPP-M0#T2-ND |
Manufacturer Part#: |
RJH60M2DPP-M0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 600V 25A 33.8W TO-220FL |
More Detail: | IGBT Trench 600V 25A 33.8W Through Hole TO-220FL |
DataSheet: | RJH60M2DPP-M0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Base Part Number: | RJH60M |
Supplier Device Package: | TO-220FL |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Reverse Recovery Time (trr): | 85ns |
Test Condition: | 300V, 12A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 32ns/70ns |
Gate Charge: | 33nC |
Series: | -- |
Switching Energy: | 180µJ (on), 180µJ (off) |
Power - Max: | 33.8W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 12A |
Current - Collector (Ic) (Max): | 25A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Part Status: | Active |
Packaging: | Tube |
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An RJH60M2DPP-M0#T2 is a transistor, more specifically an insulated gate bipolar transistor (IGBT). IGBTs differ from other common transistors, such as MOSFETs, in that they are able to control both current and voltage. This can give them a wide range of applications. The RJH60M2DPP-M0#T2 is a single IGBT, meaning it has a single P-N junction across which current flows. It has two terminals, the Collector and the Emitter, and a control terminal, the Gate.
The basic operating principle behind an IGBT is simple. A small voltage applied to the Gate creates an electric field which polarizes the P-N junction, preventing current from passing. If a larger voltage is applied, the electric field cancels out the effect of the P-N junction, allowing current to flow from the Collector to the Emitter. This makes IGBTs extremely efficient for controlling current by applying the voltage needed for switching.
Since the threshold voltage of an IGBT is relatively low, it can be used in a variety of applications. Its low threshold voltage makes it particularly useful for switching high power devices, such as motors and lights, with minimal power loss. It is also useful in driving inrush currents, as it offers low on-state resistance and can handle large currents with low switching losses. IGBTs are also commonly used in power converters, power supplies, and motor control systems.
The RJH60M2DPP-M0#T2 is a high-power IGBT designed for applications such as ceramic heating elements and high density plasma displays. It has a maximum collector-emitter voltage of 600V and a collector current of up to 10A. It is capable of handling large current loads with minimal switching loss and has a very low on-state resistance. It is a suitable choice for applications requiring fast switching and high power handling.
Overall, the RJH60M2DPP-M0#T2 is a high-power IGBT designed for applications that require fast switching and high current handling. Its low threshold voltage and low on-state resistance make it ideal for switching high power devices and inrush currents, as well as for use in power converters and motor control systems. With its wide range of applications, the RJH60M2DPP-M0#T2 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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