RJH60F6DPK-00#T0 Allicdata Electronics

RJH60F6DPK-00#T0 Discrete Semiconductor Products

Allicdata Part #:

RJH60F6DPK-00#T0-ND

Manufacturer Part#:

RJH60F6DPK-00#T0

Price: $ 5.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 85A 297.6W TO-3P
More Detail: IGBT Trench 600V 85A 297.6W Through Hole TO-3P
DataSheet: RJH60F6DPK-00#T0 datasheetRJH60F6DPK-00#T0 Datasheet/PDF
Quantity: 5
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.60530
Stock 5Can Ship Immediately
$ 5.07
Specifications
Switching Energy: --
Base Part Number: RJH60F
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 140ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 58ns/131ns
Input Type: Standard
Series: --
Power - Max: 297.6W
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
Current - Collector (Ic) (Max): 85A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The RJH60F6DPK-00#T0 is an IGBT (Insulated Gate Bipolar Transistor) which is specifically a single transistor. Insulated Gate Bipolar Transistors (IGBTs) are a type of transistor that uses both bipolar and field-effect transistors to combine the advantages of both kinds of transistors into one component. This type of transistor is used in many electronic applications and is similar to most other transistors with the main difference being that an IGBT utilizes both n-channel and p-channel elements in its structure.

This particular transistor, the RJH60F6DPK-00#T0, is commonly used in many different applications, such as in power switching, motor control, appliance control, and much more. It is particularly effective in applications where a high switching speed is required as it can operate at speeds up to 33kHz, which is higher than most traditional transistors. Another benefit of this specific IGBT is that it can also handle high voltages and currents, up to 600V, which is impressive for a single transistor.

The main components of the RJH60F6DPK-00#T0 are its drain electrodes, gate terminal, source electrodes, and body resistor. The drain electrodes, or pads, are the main elements that transfer the current from the source to the device itself. The gate terminal is the element that controls the current and determines the on/off state of the transistor. The source terminals are connected to the gate terminal and act as the main power supply for the device. Finally, the body resistor is a resistor that sits between the drain and source and helps to regulate the current flow and prevent overheating.

The working principle behind the RJH60F6DPK-00#T0 is quite simple. When voltage is applied to the Gate Terminal, this causes the device to become conductive, allowing current to flow through it from the source to the drain. This action can be controlled by adjusting the Gate Terminal voltage, which allows for precise control over the devices\' operation. If the Gate Terminal voltage is increased, the current will increase as well, which can be used for many applications.

The RJH60F6DPK-00#T0 is an ideal device for many different applications thanks to its ability to handle high voltage and current, its high switching speed, and its easy-to-use design. From power switching devices to motor control and appliance control, this single transistor can do it all. With its powerful components and simple working principle, the RJH60F6DPK-00#T0 is a great choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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