
Allicdata Part #: | RJH60A81RDPD-A0#J2-ND |
Manufacturer Part#: |
RJH60A81RDPD-A0#J2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 600V 5A |
More Detail: | IGBT Trench 600V 10A 29.4W Surface Mount TO-252 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Input Type: | Standard |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Reverse Recovery Time (trr): | 100ns |
Test Condition: | 300V, 5A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/40ns |
Gate Charge: | 11nC |
Series: | -- |
Switching Energy: | 130µJ (on), 60µJ (off) |
Power - Max: | 29.4W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 5A |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJH60A81RDPD-A0#J2 is a type of IGBT, or Insulated Gate Bipolar Transistor, belonging to the family of transistors known as Single IGBTs. These transistors are gaining popularity due to their low on-state voltage drop, low switching losses, and ability to handle high power. As a type of semiconductor power switching device, this particular IGBT can be used in a wide range of applications, from small to large-scale, such as high-frequency switching, rectification, motor control, and much more. In this article, we will explore the many applications and the working principle involved in using the RJH60A81RDPD-A0#J2. The RJH60A81RDPD-A0#J2 is well-suited for use in high-frequency switching applications such as rectifier circuits, as well as for motor control. Its low on-state voltage drop makes it ideal for power electronics where efficiency and power density are important. It also has a high switching speed, meaning it can handle relatively high frequency applications with minimal losses. In addition, its low switching losses mean that this IGBT can be used in circuits where the switching speed is especially important. The RJH60A81RDPD-A0#J2 is also well-suited for use in automotive applications such as starter controllers and powertrain controllers. This IGBT has a high current rating and can handle a wide range of voltage and current levels, making it suitable for large-scale applications. Its low power losses also make it suitable for applications in motor control and energy efficient devices, such as inverters and solar energy converters. Another application of the RJH60A81RDPD-A0#J2 is as a transistor in power MOSFETs (metal oxide semiconductor field effect transistors). These types of transistors are typically used in power applications, such as high voltage and current switching. MOSFETs are also popular in integrated circuits, as they are able to provide more flexibility and higher packing density than traditional transistors. The RJH60A81RDPD-A0#J2 is often used in high-current MOSFETs to provide improved switching performance. The working principle of the RJH60A81RDPD-A0#J2 is relatively simple. Like all transistors, it consists of three terminals: a gate, a source, and a drain. When current is passed through the gate terminal, the transistor switches from an off-state to an on-state. This can be used to control the flow of current in circuits, allowing the user to control multiple devices with a single transistor. In summary, the RJH60A81RDPD-A0#J2 is a type of IGBT belonging to the family of transistors known as Single IGBTs. It has low on-state voltage drop and low switching losses, meaning it can be used in high-frequency switching applications, motor control, and energy efficient devices. It is also commonly used in emerging power MOSFETs and integrated circuits. Its working principle is relatively simple, in that current is passed through the gate terminal to activate the transistor, allowing the user to control multiple devices with one transistor.
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