RJH60F7BDPQ-A0#T0

Input Type:	Standard
Base Part Number:	RJH60F
Supplier Device Package:	TO-247A
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	400V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C:	63ns/142ns
Series:	--
Switching Energy:	--
Power - Max:	328.9W
Vce(on) (Max) @ Vge, Ic:	1.75V @ 15V, 50A
Current - Collector (Ic) (Max):	90A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tube

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Introduction

The RJH60F7BDPQ-A0#T0 is a single insulated-gate bipolar transistor (IGBT) from Renesas Electronics made for power electronics applications up to about 600 V. It is designed for motor switching applications, such as motor drives and variable speed drives, among many other applications. IGBTs are used in a wide variety of applications, ranging from home appliances and automotive products to medical equipment and industrial use.

Design & Overview

The RJH60F7BDPQ-A0#T0 is a three-terminal semiconductor device featuring a low on-resistance, high current rating, and high voltage capability. It is a three-terminal device consisting of an anode, cathode, and base terminals. The anode is the Positive connection, the cathode is the Negative connection, and the base terminal is often referred to as a gate. It is capable of delivering up to 600V of power with a current rating up to 10 amps and no-load voltage of 6V. With a low gate capacitive charge of 0.7V, the transistor is able to quickly turn on and off, allowing for high performance at high levels of total harmonic distortion. It also features a high rated breakdown voltage of 10 kV, which provides stable operation.

Features

The RJH60F7BDPQ-A0#T0 features a variety of important features, including:• Low on-state resistance (Rdson)• Low gate charge• High breakdown voltage• Overcurrent protection• High switching frequency• Low driving voltage• Low voltage clamping• High efficiency• High current rating• Low switching noise• High temperature ratings • Low EMI and RFIThese features make the RJH60F7BDPQ-A0#T0 an ideal choice for applications such as motor switching, high power switching, and power factor correction, among other applications.

Application Fields

Because of its high thermal and current ratings, the RJH60F7BDPQ-A0#T0 is well-suited for motor switching and control applications, such as motor drives, medium power switching, and power factor correction. It is also used in a variety of other applications, such as solar panel and inverter controller circuits, electric vehicles, industrial automation, and medical equipment.

Working Principle

The RJH60F7BDPQ-A0#T0 is an IGBT which is a combination of an insulated-gate FET (IGFET) and a bipolar junction transistor (BJT). It consists of two separate channels, an N-channel MOSFET and a normal PNP bipolar junction transistor. When a current passes through the base terminal, the PNP transistor turns on, allowing current to pass through the N-channel MOSFET as well. This turns on the IGBT, allowing current to flow between the anode and cathode terminals. The IGBT works like a traditional switch, with the current being switched on and off by the applied voltage on the gate terminal. In order to switch off the IGBT, the voltage on the gate terminal needs to be decreased again. This depends on the current in the IGBT itself and the load connected to it.

Conclusion

The RJH60F7BDPQ-A0#T0 is an IGBT featuring a low on-resistance, high current rating, and high voltage capability. This makes it suitable for motor switching, high power switching, and power factor correction applications. It also features a low gate charge, high breakdown voltage, overcurrent protection, low switching noise, and high temperature ratings, making it an excellent choice for a variety of applications.

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