RJH60F5DPK-00#T0 Allicdata Electronics
Allicdata Part #:

RJH60F5DPK-00#T0-ND

Manufacturer Part#:

RJH60F5DPK-00#T0

Price: $ 3.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 80A 260.4W TO-3P
More Detail: IGBT Trench 600V 80A 260.4W Through Hole TO-3P
DataSheet: RJH60F5DPK-00#T0 datasheetRJH60F5DPK-00#T0 Datasheet/PDF
Quantity: 13
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.04920
10 +: $ 2.72097
Stock 13Can Ship Immediately
$ 3.35
Specifications
Switching Energy: --
Base Part Number: RJH60F
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 140ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 53ns/105ns
Input Type: Standard
Series: --
Power - Max: 260.4W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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RJH60F5DPK-00#T0 Application Field and Working Principle

Transistors - IGBTs - Single

RJH60F5DPK-00#T0 is a type of insulated gate bipolar transistor (IGBT). IGBTs have become one of the most popular types of transistors in the past decade due to their superior performance, higher power density, and low operating costs compared to traditional bipolar transistors. The RJH60F5DPK-00#T0 is one of the most popular IGBTs on the market today.

The main application field of the RJH60F5DPK-00#T0 is in industrial applications. These include inverter drives, DC motor speed controls, and welding equipment. Due to its high power capability, these IGBTs are commonly used in high-power industrial applications such as locomotives, mining equipment, and large-scale wind turbines. It is also suitable for high-voltage applications, such as traction power control.

The working principle of the RJH60F5DPK-00#T0 is based on the principle that when a voltage is applied to a PN junction, a diode will be formed. If a reverse-biased PN junction is then placed between two insulated gates, known as the "emitter" and "collector", the voltage across the junction will be decreased, resulting in a higher conduction current. This is the basis for the operation of the RJH60F5DPK-00#T0.

The RJH60F5DPK-00#T0 also has a low series resistance, meaning that the power dissipation is reduced, resulting in decreased power losses. This results in more efficient power conversion and improved system performance. Furthermore, the low series resistance means that the IGBTs are capable of operating at higher frequencies and with lower switching losses.

In conclusion, the RJH60F5DPK-00#T0 is a high-performance IGBT suitable for high-power industrial and traction applications. Its superior performance and low power losses make it an ideal choice for these applications. It is also easy to use, install, and maintain.

The specific data is subject to PDF, and the above content is for reference

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