RJH60D7ADPK-00#T0

Switching Energy:	1.1mJ (on), 600µJ (off)
Base Part Number:	RJH60D
Supplier Device Package:	TO-3P
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	300V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C:	60ns/190ns
Gate Charge:	130nC
Input Type:	Standard
Series:	--
Power - Max:	300W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 50A
Current - Collector (Ic) (Max):	90A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The RJH60D7ADPK-00#T0 is a single IGBT transistor optimized for high-current applications. It has an isolated base-emitter voltage of 600V, an on-state voltage drop of 3.2V, and a maximum operating frequency of 900kHz. It is designed to provide high efficiency, low power loss, and high reliability in high-power applications.

Application Fields

The RJH60D7ADPK-00#T0 is primarily used in switching applications such as motor control, power inverter, power converters and other power electronics. It can also be used in DC/DC or AC/DC converters, UPS systems and power supply. Due to its high current capability and compact size, the RJH60D7ADPK-00#T0 is particularly suitable for applications requiring high power density.

Working Principle

The basic working principle of the RJH60D7ADPK-00#T0 is the same as that of other IGBT transistors. It consists of an N-channel insulated gate field effect transistor (IGFET) bonded to a P-channel MOSFET in a monolithic construction. When the gate voltage (VGS) is lower than the threshold voltage (VTH), the transistor is off and no current passes. When the gate voltage is higher than the threshold voltage, the gate-emitter junction allows current flow, and the power device is switched on. This switching action can be controlled by the gate voltage, enabling the IGBT to be used as a switch in a wide range of applications.

Advantages

The RJH60D7ADPK-00#T0 is a high-power version of IGBT transistors. It has a voltage rating of 600V, a on-state voltage drop of 3.2V, and a maximum operating frequency of 900kHz. It also features a low gate drive voltage, low surge current, fast switching speed and excellent energy efficiency. Moreover, the IGBT provides a high level of protection against reverse voltages and over-currents.

Limitations

Despite its benefits, the RJH60D7ADPK-00#T0 has its limitations. Its high current capability and high frequency operations require careful circuit design and layout to ensure proper functioning. The use of inadequate heatsinks can lead to thermal runaway and can damage the device. Also, since IGBTs are voltage controlled devices, the gate current will increase dramatically if the gate-source voltage is not properly controlled. The protection circuitry used with the IGBT must be designed carefully to ensure the protection from these unwanted conditions.

Conclusion

The RJH60D7ADPK-00#T0 is a high-current single IGBT optimized for use in a variety of power electronics applications. It offers high efficiency, low power loss, and high reliability. The transistor is designed with a low gate drive voltage, low surge current and fast switching speed, making it suitable for use in a wide range of applications. However, proper circuit design and layout are necessary, and adequate protection circuitry must be added to prevent against current overloading and over-voltage conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description