RJH60V1BDPP-M0#T2

Input Type:	Standard
Base Part Number:	RJH60V
Supplier Device Package:	TO-220FL
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	300V, 8A, 5 Ohm, 15V
Td (on/off) @ 25°C:	30ns/55ns
Gate Charge:	19nC
Series:	--
Switching Energy:	17µJ (on), 110µJ (off)
Power - Max:	30W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 8A
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tube

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Introduction

RJH60V1BDPP-M0#T2 is an Insulated Gate Bipolar Transistor (IGBT) from the single series. It is typically used to control motors, solenoids, and other electronics devices. It is available in a package size of SOT-23F. This transistor can easily switch between different electronic functions with the use of interrupts.

Applications of RJH60V1BDPP-M0#T2

RJH60V1BDPP-M0#T2 can be used in a variety of applications. Examples include:

• Motor Control: It can be used to control the speed and direction of motors, providing bi-directional speed control.
• Solids Control: This transistor can be used to control solenoids, allowing for precise control of opening and closing valves.
• Sensors and Detectors: Due to its low power requirement, this transistor can be used to sense position, proximity and acceleration.
• Lighting: This transistor can be used to provide on/off control of lighting systems and dimmers.

Working Principle of RJH60V1BDPP-M0#T2

RJH60V1BDPP-M0#T2 works by using a current in the gate to control a current in the main electrode. The current in the gate generates an electric field, which acts on an insulated layer of conductive material, called a GIK. This electric field causes a voltage to appear across the GIK, and a current to flow in the main electrode of the transistor. The amount of current that can flow through the main electrode is determined by the amount of current applied to the gate. This means that the transistor can be used to control the flow of current through the main electrode by controlling the current in the gate. This is the principle of insulation gate bipolar transistor (IGBT) technology. The transistor can operate in either forward or reverse directions. When in reverse direction, the transistor works by allowing a current to flow from the main electrode to the gate. This current is limited by the gate-source voltage, VGS. When in forward direction, the transistor works by allowing a current to flow from the gate to the main electrode. This current is limited by the gate-drain voltage, VGD.

Advantages of RJH60V1BDPP-M0#T2

RJH60V1BDPP-M0#T2 offers a number of advantages, including:

• High Operating Temp: This transistor can operate at temperatures up to 175 degrees Celsius, making it a suitable choice for applications in high temperature environments.
• High Frequency: This transistor can operate at frequencies of up to 1MHz, allowing for fast switching speeds.
• Low VCEsat: The low VCEsat rating of this transistor ensures that it is suitable for use with low voltage systems.
• Low Gate Drive Requirements: The low gate drive requirement of this transistor means that it is suitable for use with low power systems.

Conclusion

RJH60V1BDPP-M0#T2 is a single Insulated Gate Bipolar Transistor (IGBT) which is suitable for use in a variety of applications. It offers a number of advantages, including high operating temperature, high frequency, low VCEsat, and low gate drive requirements. The transistor works by using a current in the gate to control a current in the main electrode, and can operate in either forward or reverse directions.

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