RJH60D5DPK-00#T0

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Transistors – IGBTs – Single

The RJH60D5DPK-00#T0 is a single-phase IGBT (Insulated Gate Bipolar Transistor) developed by Rohm Semiconductor. It has a current C rating of 60A with Tjunction up to 175°C. The module is mainly used in various electronics applications including motion control, motor drives, power conversion, and power distribution.

An insulated gate bipolar transistor is a type of power transistor which combines an isolated metal-oxide-semiconductor (MOS) gate structure with a bipolar junction transistor (BJT) base region. Like a standard BJT, an IGBT has a base region, an emitter region, and a collector region. When the gate of the IGBT is turned on, the current is able to pass from the collector to the emitter just like a BJT. In addition, because of the insulated gate structure of the IGBT, it also has a much faster switching speed than a BJT, making it ideal for power electronic applications.

Working Principle and Advantages

The working principle of an IGBT is the same as a standard BJT. However, because of its insulated gate structure, it has certain advantages which make it an excellent choice for power conversion applications. The most significant advantage of an IGBT is its low ON position resistance, which results in a much lower power dissipation than other power devices. In addition, IGBTs also have a much higher switching speed than BJTs. This makes them suitable for applications that require frequent switching of power, such as motor drives and power converters.

In addition to its low power dissipation and high switching speed, IGBTs also have a much higher dielectric breakdown voltage than BJTs. This makes them suitable for use in applications with high input voltages, such as power converters and motor drives.

Applications

The RJH60D5DPK-00#T0 is suitable for a wide range of applications, including:

• Motion control
• Motor drives
• Power conversion
• Power distribution
• Solar panel controllers
• LED lighting controllers

Conclusion

The RJH60D5DPK-00#T0 is a single-phase IGBT developed by Rohm Semiconductor. It offers excellent features such as a current C rating of 60A with Tjunction up to 175°C, low power dissipation, and high switching speed, making it an ideal choice for applications requiring frequent switching of power, such as motor drives, power conversion, power distribution, and solar panel controllers. In addition, the IGBT also has a much higher breakdown voltage than BJTs, making it suitable for high voltage applications.