RJH60D5DPM-00#T1

Input Type:	Standard
Base Part Number:	RJH60D
Supplier Device Package:	TO-3PFM
Package / Case:	TO-3PFM, SC-93-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	300V, 37A, 5 Ohm, 15V
Td (on/off) @ 25°C:	50ns/135ns
Gate Charge:	78nC
Series:	--
Switching Energy:	650µJ (on), 270µJ (off)
Power - Max:	45W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 37A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tube

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RJH60D5DPM-00#T1 Application Field and Working Principle The RJH60D5DPM-00#T1 is a single insulated-gate bipolar transistor (IGBT) designed for high speed switching applications. It is best known for its ability to switched power from a lower voltage to a higher voltage, making it an ideal choice for industrial automation, automotive and communication applications. This IGBT also has low on-state voltage drop to increase efficiency and reduce thermal stress on components.Overview of the IGBTThe RJH60D5DPM-00#T1 IGBT is a 600V, 5A device with a low output capacitance of 30 pF, making it optimal for high speed switching. It is encapsulated in a TO-252 package, which allows a maximum junction temperature of 150°C. Due to its efficient power loss performance and low thermal resistance, this device is particularly suited for resonant converter applications. Technical ParametersThe RJH60D5DPM-00#T1 IGBT features a collector-emitter voltage of V CEO of 600V and a collector current of 5A. It has a forward voltage drop of VF of 1.62V and a reverse voltage avalanche rating of VR of 600V. It has a typical switching speed of t r of 20ns and a maximum value of t r of 90ns. Its gate charge is Q g of 2.1nC and gate threshold voltage of 4.3V. The on-state voltage drop of this device is V CE(sat) of 1.3V. Its storage and fall time is t f of 100ns. Working Principle of the IGBTThe RJH60D5DPM-00#T1 IGBT is an insulated-gate bipolar transistor (IGBT) that uses a gate charge to control the switching of power from a lower voltage to a higher voltage. This switching action is achieved by controlling the current flow between the two terminals, which is done by using the gate charge (Q g ) to change the on-state voltage drop (V CE(sat) ) of the IGBT. When the gate is charged, the on-state voltage drop across the IGBT is reduced, allowing the power to pass through more freely.When the gate charge is depleted, the on-state voltage drop increases, preventing the current flow and thus switching off the power. As can be seen, the RJH60D5DPM-00#T1 IGBT is able to switch power from a lower voltage to a higher voltage, making it ideal for many switching applications.ApplicationsDue to its fast switching speed, low on-state voltage drop, and efficient power loss performance, the RJH60D5DPM-00#T1 IGBT can be utilized in a variety of different industrial automation, automotive, and communication applications. Examples include automation equipment, telecom base station power, automotive electronics and lighting, white goods and Uninterruptible Power Supply (UPS) applications. ConclusionThe RJH60D5DPM-00#T1 is an IGBT designed for high speed switching applications. It has a V CEO of 600V and a collector current of 5A with a typical switching speed of t r of 20ns. It is encapsulated in a TO-252 package and has a maximum junction temperature of 150°C. This IGBT uses a gate charge to control the switching of power from a lower voltage to a higher voltage and it is especially suited for resonant converter applications. It can be used in a variety of industrial automation, automotive and communication applications, including automation equipment, telecom base station power, automotive electronics, white goods, and UPS applications.

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