RJH60D6DPM-00#T1 Allicdata Electronics
Allicdata Part #:

RJH60D6DPM-00#T1-ND

Manufacturer Part#:

RJH60D6DPM-00#T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 80A 50W TO-3PFM
More Detail: IGBT Trench 600V 80A 50W Through Hole TO-3PFM
DataSheet: RJH60D6DPM-00#T1 datasheetRJH60D6DPM-00#T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: RJH60D
Supplier Device Package: TO-3PFM
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 300V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C: 50ns/160ns
Gate Charge: 104nC
Series: --
Switching Energy: 850µJ (on), 600µJ (off)
Power - Max: 50W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Part Status: Active
Packaging: Tube 
Description

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IGBTs, or insulated-gate bipolar transistors, are transistors with a power switching and amplification ability unsurpassed by any other semiconductor device in the market. The RJH60D6DPM-00#T1 is a single-chip IGBT that stands out from the rest with its incredible range of features and operational efficiency.

This IGBT is designed to work with logic signals, providing fast on/off response time and EMI protection due to the built-in protection circuitry. This IGBT also features an integrated gate drive circuit and some of the highest ratings in the industry in terms of voltage, current, and power ratings. The RJH60D6DPM-00#T1 is able to handle as much as 600 volts and 100 amps, making it suitable for many types of applications.

RJH60D6DPM-00#T1 is ideal for applications in which fast switching, low conduction losses, and protection from overload is required. It is commonly used in motor and lighting control, power supplies, and for other industrial applications, such as in welding and air conditioning units. It can also be used in robotics, as its fast switching performance and reliable protection from overload makes it well suited for this purpose.

The internal workings of the RJH60D6DPM-00#T1 are quite complex and comprehensible only to the most seasoned engineers. Basically, the IGBT consists of two layers of semiconductor material, the collector and emitter, between which a thin insulating layer, the gate, is used to control the devices\' operations. The gate voltage provides the "on" or "off" signal, while the collector and emitter take care of the current flow.

The main advantage of using an IGBT as opposed to other types of transistors lies in its efficiency. Because the IGBT has a low on-state voltage drop and large current-handling capability, it can be used without much difficulty and still provide an excellent power savings. Furthermore, IGBTs can be manufactured with a wide range of on-state voltages for highly varied applications.

Due to its impressive range of features, the RJH60D6DPM-00#T1 is the ideal choice for many types of industrial applications. Its ability to handle high current, its fast switching speed, and its protection from overload makes it a reliable and efficient choice that is sure to remain popular for many years to come.

The specific data is subject to PDF, and the above content is for reference

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