RJH60D7BDPQ-E0#T2 Allicdata Electronics
Allicdata Part #:

RJH60D7BDPQ-E0#T2-ND

Manufacturer Part#:

RJH60D7BDPQ-E0#T2

Price: $ 4.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 90A 300W TO-247
More Detail: IGBT Trench 600V 90A 300W Through Hole TO-247
DataSheet: RJH60D7BDPQ-E0#T2 datasheetRJH60D7BDPQ-E0#T2 Datasheet/PDF
Quantity: 100
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.03830
10 +: $ 3.60549
25 +: $ 3.24475
100 +: $ 2.95627
Stock 100Can Ship Immediately
$ 4.45
Specifications
Switching Energy: 700µJ (on), 1.4mJ (off)
Base Part Number: RJH60D
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 300V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C: 60ns/180ns
Gate Charge: 125nC
Input Type: Standard
Series: --
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Current - Collector (Ic) (Max): 90A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs (Isolated Gate Bipolar Transistors) transistors are one of the most common types of transistors used in electronics. In some cases, they are used as a single device to control current. Some of the most popular single IGBTs include the RJH60D7BDPQ-E0#T2 device. This article will explore the application field and working principle of this particular device.

RJH60D7BDPQ-E0#T2 is designed to provide high-speed switching with low on-resistance. It features a chip-level ESD protection and a maximum current rating of 12 A. This device can be used in applications such as field-oriented control, lighting control, and motor control. It can also be used as a power switching transistor.

The working principle of RJH60D7BDPQ-E0#T2 is based on the principle of charge-sharing. This is how current transfer works in a transistor. When a small voltage is applied to a base terminal (gate) of the transistor, electrons are attracted from the emitter to the collector. This creates a potential difference between the two terminals. As a result, current flows across the base-emitter junction.

The voltage applied to the base terminal (gate) determines the amount of current that is allowed to flow from the collector to the emitter. Higher voltage applied to the base terminal increases the current through the collector and lower voltage decreases it. This is the principle of charge-sharing in action.

RJH60D7BDPQ-E0#T2 has a very low on-resistance rating of 0.09 ohm. This helps reduce power losses in the transistor. In addition, the device is designed to work at very high switching speeds of up to 100 kHz. This makes it ideal for applications that require fast switching, such as switch mode power supplies.

RJH60D7BDPQ-E0#T2 can be used in many applications where high-speed switching is required and low on-resistance is desired. This device is an excellent choice for field-oriented control, lighting control, and motor control. It is also suitable for use in switch mode power supplies. With its low on-resistance, this device is also a great choice for power switching transistor applications.

The specific data is subject to PDF, and the above content is for reference

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