RJH60V2BDPE-00#J3 Discrete Semiconductor Products

Input Type:	Standard
Base Part Number:	RJH60V
Supplier Device Package:	4-LDPAK
Package / Case:	SC-83
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	300V, 12A, 5 Ohm, 15V
Td (on/off) @ 25°C:	33ns/65ns
Gate Charge:	32nC
Series:	--
Switching Energy:	30µJ (on), 180µJ (off)
Power - Max:	63W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 12A
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Transistors are electrical components that control electricity and are used in virtually all electronic circuits. IGBTs, or insulated-gate bipolar transistors (IGBTs), are special types of transistors that allow current and voltage to be controlled more efficiently by using fewer components than traditional transistors. Single IGBTs are ideal for applications that require low-on-state voltage drop, high breakdown voltage, and high switching frequency. The RJH60V2BDPE-00#J3 single IGBT is designed for high-speed switching and offers a robust and reliable power switching solution for a wide range of applications. The RJH60V2BDPE-00#J3 is a high-performance single IGBT with a breakdown voltage of 600V, a maximum junction temperature of up to 175°C, and a maximum collector dissipation of 60W. This IGBT is ideal for applications such as motor control, telecom systems, power supplies, PC power, and AC/DC converter systems. It is rated for operating temperatures from -30°C to 150°C, making it well suited for both indoor and outdoor applications. The RJH60V2BDPE-00#J3 is designed to allow high-current switching with low output voltage. Its low on-state voltage drop and fast switching speeds allow for improved efficiency and power savings. The IGBT’s low on-state voltage drop minimizes power losses and provides high efficiency. Its fast switching speeds enable the IGBT to be used in applications requiring higher switching frequencies, such as switching mode power supplies and motor control systems.The RJH60V2BDPE-00#J3’s low on-state voltage drop and high breakdown voltage make it a great choice for applications that require power savings, high efficiency, and high-speed switching. Its high breakdown voltage allows it to operate in high voltage systems, while its low on-state voltage drop minimizes power losses. Its fast switching speeds and high current ratings make it well suited for high-frequency applications. The working principle of the RJH60V2BDPE-00#J3 is based on the ability of its two gates to control the flow of current into and out of its collector terminal. When one gate is given a positive voltage and the other gate is given a negative voltage, the collector terminal becomes a junction between the two gates and current is allowed to flow from the collector to the emitter. When both gates are given the same voltage, current is blocked. This creates a switching action similar to a relay or switch, allowing the IGBT to be used as a switch for controlling voltage or current in an application.In summary, the RJH60V2BDPE-00#J3 single IGBT is an ideal choice for applications that require high-speed switching performance, high-current capability, and low on-state voltage drop. Its fast switching speeds and high breakdown voltage make it well-suited for high-voltage applications, while its low on-state voltage drop minimizes power losses and improves efficiency. Its working principle is based on the ability of its two gates to control the flow of current into and out of its collector terminal.

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