RJH60V2BDPP-M0#T2 Allicdata Electronics
Allicdata Part #:

RJH60V2BDPP-M0#T2-ND

Manufacturer Part#:

RJH60V2BDPP-M0#T2

Price: $ 2.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: IGBT 600V 25A 34W TO-220FL
More Detail: IGBT Trench 600V 25A 34W Through Hole TO-220FL
DataSheet: RJH60V2BDPP-M0#T2 datasheetRJH60V2BDPP-M0#T2 Datasheet/PDF
Quantity: 28
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.88370
10 +: $ 1.70415
25 +: $ 1.52158
Stock 28Can Ship Immediately
$ 2.07
Specifications
Switching Energy: 30µJ (on), 180µJ (off)
Base Part Number: RJH60V
Supplier Device Package: TO-220FL
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 300V, 12A, 5 Ohm, 15V
Td (on/off) @ 25°C: 33ns/65ns
Gate Charge: 32nC
Input Type: Standard
Series: --
Power - Max: 34W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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RJH60V2BDPP-M0#T2 Application Field and Working Principle

RJH60V2BDPP-M0#T2 is a state-of-the-art IGBT module that may be used for various power electronics applications. It is part of the Toshiba FT IGBT product series and can provide various advantages, such as improved switching performance, higher voltage withstanding capability, and lower power loss.

This IGBT module is used extensively in various applications such as electric vehicles, server power supplies, electric motorcycles, wind and solar power, aircraft power systems, and more. This IGBT module is also suitable for various high-power applications, such as high current carrying applications due to its low on-state resistance.

Working Principle of RJH60V2BDPP-M0#T2

The RJH60V2BDPP-M0#T2 IGBT module utilizes a gate turn-on gate voltage Vgt to turn on the junction voltage Vj. This voltage is used to control the connection between collector and emitter of the module, allowing current to flow through the circuit. During the “on” state, the current flows through the collector and emitter, and the voltage is adjusted to control the current. On the other hand, during the “off” state, the current is cut off, and Vj is zero.

Additionally, the IGBT module can be easily controlled by adjusting different junction voltages, such as Vgt, Vj, and Vce, as they are all correlated. In addition, the IGBT module also provides short circuit protection; the current flowing through the IGBT can be limited to a safe level through pulse width modulation.

Conclusion

In conclusion, the Toshiba RJH60V2BDPP-M0#T2 can be used for various power electronics applications and has many advantages, such as improved switching performance, higher voltage withstanding capability, and lower power loss. This state-of-the-art IGBT module utilizes a gate turn-on voltage Vgt to turn on and control the connection between collector and emitter, allowing for current flow. It also provides short circuit protection and can be easily controlled by adjusting different junction voltages, such as Vgt, Vj, and Vce.

The specific data is subject to PDF, and the above content is for reference

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