Allicdata Part #: | RN4Z-ND |
Manufacturer Part#: |
RN 4Z |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 200V 3.5A AXIAL |
More Detail: | Diode Standard 200V 3.5A Through Hole |
DataSheet: | RN 4Z Datasheet/PDF |
Quantity: | 99 |
1 +: | $ 0.57960 |
10 +: | $ 0.51282 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3.5A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 3.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 100ns |
Current - Reverse Leakage @ Vr: | 50µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The 4Z diodes, also known as high-voltage rectifiers, have been used in a wide variety of applications, ranging from medical to industrial. The 4Z diodes have a single rectifier characteristic, meaning they only allow current flow in one direction and block current flow in the opposite direction. These diodes are often used in applications where large inducement is required, such as in AC to DC converters, UPS systems, and electronic stabilizers. In addition, these diodes are also used for power control in high power devices, such as TV sets, high voltage amplifiers, and linear power supplies.
The 4Z diodes are also ideal for applications that require precisely controlled voltage, such as in telecommunication and automotive applications. They are suitable for AC to DC rectifiers, supplied in both low- and high-voltage packages. The single rectifier characteristic of the 4Z diodes makes them an ideal solution for various industrial applications such as welding machines, frequency control, and pulse modulation. Additionally, the 4Z diode is suitable for high-frequency circuits, due to its wide operation frequency for ripple current.
The working principle behind the 4Z diodes is based on two distinct characteristics, namely the forward and reverse bias. When a 4Z diode is in reverse bias, it does not conduct any current due to the depletion region that is created. The depletion region is created by the voltage applied to the diode resulting in the depletion of electrons in the P-type region. As a result, no current is able to pass through the diode in this state. However, if a current is passed through the diode in the forward bias direction, the electrons in the P-type region are swept away, and a current flows through the diode.
The breakdown voltage and current of the 4Z diode varies depending on the size of the diode and the type of semiconductor materials used. Generally, the larger and higher quality the semiconductor materials used, the higher the breakdown and current of the device. Additionally, the 4Z diode also has a reverse recovery time that determines how quickly the device can switch on and off for different levels of voltage or current. This parameter is essential for high-frequency switches or converters.
In summary, 4Z diodes are suitable for a wide variety of applications due to their single rectifier characteristic and high breakdown voltage. They are often used in AC to DC rectifiers, telecommunication and automotive applications, welding machines, and high-frequency circuits. Furthermore, the breakdown voltage and current of the device vary depending on the size and quality of the semiconductor materials used, as does the reverse recovery time which is essential for high-frequency switches or converters.
The specific data is subject to PDF, and the above content is for reference
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