RN4984(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN4984(T5LFT)TR-ND

Manufacturer Part#:

RN4984(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4984(T5L,F,T) datasheetRN4984(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN4984 (T5L,F,T) is one of the most popular transistors used in a wide range of applications. This article will provide an overview of the applications and working principles of the RN4984 (T5L,F,T).

The RN4984 (T5L,F,T) belongs to the Transistors - Bipolar (BJT) - Arrays, Pre-Biased class of transistors. It is a multi-pack integrated Transistor Array (or Transistor Array) that contains four individually isolated transistors with an integrated over-driving protection and an internal isolation resistor. Each transistor has its own emitter-base and collector-base regions connected by a bridge. As a result, the transistor array has an improved leakage current, higher voltage rating, and improved overall performance when compared to components with only two transistors.

The RN4984 (T5L,F,T) can be used in a wide range of applications that require high performance. It can be used in power amplifiers, power supplies, and power management systems. It can also be used in radio and audio communications, digital signal processing (DSP) applications, and medical monitoring applications.

The RN4984 (T5L,F,T) has a current capability of up to 5A peak, and a switching speed of up to 0.5 picoseconds. It has a low thermal resistance and may be used in applications where high power dissipation is required. The low thermal resistance ensures that the transistor will maintain stable performance when placed under high temperature conditions.

The RN4984 (T5L,F,T) has a breakdown voltage of up to 25V and can withstand reverse battery currents of up to 10mA. It also has a high current capacity of up to 30mA and can switch current up to 800mA. The device is also designed to withstand over-current and over-voltage conditions, making it ideal for use in harsh environments.

The working principle of the RN4984 (T5L,F,T) is based on the principles of bipolar junction transistors (BJTs). BJTs are comprised of two PN-junction diodes connected in a manner so that the current can flow between them. By altering the voltage applied to the base of the transistor, the current flow can be increased or decreased, allowing the transistor to amplify a signal or control the current flow in a circuit.

The RN4984 (T5L,F,T) has an integrated over-driving protection that limits the current flow in the event of an over-voltage or over-current condition. The device also features an internal isolation resistor to prevent static electricity from damaging sensitive devices. The device has a wide operating temperature range from -40°C to +125°C and can be used in applications operating in extreme temperature conditions.

The RN4984 (T5L,F,T) is an ideal choice for a wide range of applications in medical monitoring, radio and audio communications, and digital signal processing (DSP). It is a reliable, cost-effective, and high performance device that can be used in a wide range of extreme temperature applications.

The specific data is subject to PDF, and the above content is for reference

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