RN4981FE,LF(CB Discrete Semiconductor Products |
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Allicdata Part #: | RN4981FELF(CBTR-ND |
Manufacturer Part#: |
RN4981FE,LF(CB |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4981FE,LF(CB Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz, 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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.RN4981FE, LF is a pre-biased bipolar transistor array that is widely used in a variety of applications. It utilizes advanced chip design technology and microelectronics packaging techniques to deliver superior performance and reliability. This device is particularly suitable for high-frequency, high-power applications due to its low noise and high current handling capabilities.
The RN4981FE, LF consists of four NPN transistors with a collector-base voltage of 8V and a collector-emitter voltage of 15V. It is capable of carrying up to 4A of continuous current, and a peak current of 6A. The quiescent current is 15mA and the power dissipation is 6W. The device also features a wide 0.5kHz switching frequency, making it suitable for high-speed applications.
The RN4981FE, LF is designed with an advanced mounting solution that allows it to easily fit into smaller spaces. It features a coaxial package, allowing the device to be mounted closer to the heat-dissipating components. This helps to reduce heat buildup and improve overall system reliability and performance.
The device features a self-contained biasing network, allowing the user to eliminate the need for an external bias supply. This makes the RN4981FE, LF a suitable choice for low-power applications and reduces board space requirements.
The device’s internal circuitry and technology provide superior protection characteristics, improved frequency response, and superior gains. The device also incorporates a shielding system that helps reduce interference and noise.
The RN4981FE, LF operates over a wide temperature range of -55° and +125° C. Its high-current-handling capability is maintained across the temperature range, allowing it to handle higher duty cycles than traditional pre-biased arrays. The device also has low voltage degradation, allowing for longer operating life and improved stability.
The RN4981FE, LF is suitable for a variety of applications, including analog and digital circuits, motor control applications, HVAC systems, and lighting systems. Its high power capabilities make it suitable for high-current applications, such as automotive and industrial applications. This device is also popular in medical and simulation systems due to its reliability, low noise, and high-frequency response.
In summary, the RN4981FE, LF is a pre-biased bipolar transistor array suitable for a variety of applications. It features an advanced mounting solution and self-contained biasing network, allowing it to fit into smaller spaces and eliminate the need for an external bias supply. The device operates over a wide temperature range and has a high-current handling capability, making it suitable for high-power applications. Its shielding system helps to reduce interference and noise, and its low voltage degradation ensures long-term stability and reliability.
The specific data is subject to PDF, and the above content is for reference
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