RN4982FE,LF(CB Allicdata Electronics
Allicdata Part #:

RN4982FELF(CBTR-ND

Manufacturer Part#:

RN4982FE,LF(CB

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4982FE,LF(CB datasheetRN4982FE,LF(CB Datasheet/PDF
Quantity: 1000
4000 +: $ 0.03043
8000 +: $ 0.02646
12000 +: $ 0.02249
28000 +: $ 0.02117
100000 +: $ 0.01764
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN4982FE LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased type of device. It is a family of devices designed for use in CB (constant-bias) applications. As such, it is made up of several BJT transistors with pre-biased emitters, as well as a resistive distributed current sink.

This device operates using a constant-bias configuration, also known as a self-biasing circuit. This works by applying a constant voltage across the collector and emitter electrodes of a single transistor, and thus creates a fixed current and voltage drop. The RN4982FE LF is unique in that it uses a distributed current sink with pre-biased emitters to provide better current flow results as compared to a single-transistor solution.

The RN4982FE LF utilizes a current sink comprised of multiple thin-film resistors to generate a constant current. This is done through the use of multiple low-resistance resistors connected in parallel. The resistors are connected between a common transistor emitter, and another common transistor collector. The steady current created by these resistors is then shared among all of the transistors connected to them.

The fixed current produces a voltage drop across each of the transistors which allows for a constant-bias configuration. In this way, the RN4982FE LF allows for the generation of a steady current and allows for all the connected transistors to operate in unison, as opposed to being affected by individual variations.

The RN4982FE LF also has a very small form factor, which makes it ideal for applications where space is a concern. Its small size also allows it to fit into even the tightest spaces, making it perfect for use in applications where a single-transistor solution is not feasible. This makes it possible to use it in applications where the traditional current sink approach would not be feasible.

In conclusion, the RN4982FE LF is a versatile, high performance device designed for use in a CB application field. Its pre-biased emitters, distributed current sink, and small form factor make it an ideal choice for applications that require a steady current, and where space is at a premium.

The specific data is subject to PDF, and the above content is for reference

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