RN4909(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN4909(T5LFT)TR-ND

Manufacturer Part#:

RN4909(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4909(T5L,F,T) datasheetRN4909(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN4909(T5L,F,T) is a four-bi-directional transistor array, particularly well-suited to be used in pre-biased applications. This kind of component is commonly used in power grids, data processing systems and communication systems or circuits. The RN4909(T5L,F,T) is a combination of four transistors in one robust and compact package and it behaves similarly to a Darlington or a Wilson transistor array.

The four transistors in the RN4909(T5L,F,T) agree with the behavior of regular bipolar junction transistors and they are often used as switches and amplifiers. The four transistors are PNP and NPN, so there are two for each type. The voltage range for each transistor’s collector-emitter range from -45 to 45V typically, and the base-emitter range from -5 to 5V typically. This means the transistor array is suitable for various pre-biased applications.

Since the RN4909(T5L,F,T) has four transistors, these have to be connected in a certain way for it to function properly. Each of the four transistors has its own pin and each of the two NPN transistors and two PNP transistors are connected together using the two common emitter pins. This provides two differential, complementary NPN-PNP pairs.

When the ‘EN’ pin is made high, all the four transistors in the RN4909(T5L,F,T) conduct normally. When this pin is made low, all the four transistors switch off instantly. This helps reduce the power consumption of the system or the circuit while operating.

The RN4909(T5L,F,T) operates in its linear region when a proper voltage supply is provided to the ‘EN’ pin. When the transistor array is energized, the gate leakage current of the array pin does not exceed 80nA, and it is in its cut-off mode when it is un-energized and the gate current does not exceed be 5nA. The total leakage current of the transistor array is not more than 5uA.

The RN4909(T5L,F,T) can be used in various pre-biased applications like power supplies, data processing systems, and communication circuits. Two types of pre-biased application are currently in use the Low-Voltage Differential Signaling (LVDS) and Common-Mode Signaling (CMS). LVDS is mainly used in high-speed devices like disks and CPUs and CMS is mainly used in communications and couplers. In both cases, the RN4909(T5L,F,T) can be used for providing different amounts of voltage to the ‘EN’ pin to switch the transistors in and out of the circuit.

In summary, the RN4909(T5L,F,T) is an effective and reliable four bi-directional transistor array with four separate transistors connected via two common emitter pins. It is well-suited for use in pre-biased applications like power supplies, data processing systems, and communication circuits. It is a robust, compact and reliable transistor array and is commonly used in today’s day and age.

The specific data is subject to PDF, and the above content is for reference

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