RN4988(T5L,F,T) Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN4988 (T5L, F, T) is a type of transistor array pre-biased with built-in collector-emitter voltage. This device operates mainly using BJT (Bipolar Junction Transistor) technology and can be used in a variety of applications to provide direct current gain and voltage amplification. The RN4988 features both standard and custom power devices, along with two high voltage disk resistors. With tight tolerances on all components, the RN4988 provides great performance with improved reliability.

One of the major advantages of the RN4988 is the greatly reduced design timeline, which greatly speeds up the development of circuits based on it. This is due to the pre-biased device’s ability to achieve full current gain with just one biasing resistor and no additional circuit design. Furthermore, this device also has the ability to perform multiplexing, as it is configured with multiple individual channels with single or balanced output.

In terms of performance, the RN4988 features a wide operating temperature range, with a maximum frequency of 125kHz and a maximum collector-emitter voltage of 200V. This device is also available in both through-hole and surface-mounted packages. Furthermore, it is also fully RoHS compliant, meaning that it meets the latest requirements in terms of hazardous materials. Because of its robust and reliable performance, the RN4988 is suitable for a variety of applications, particularly in automotive and industrial applications.

The RN4988 operates using BJT technology, which means that it requires a collector-emitter voltage to achieve full current gain. This voltage can be supplied either externally or through the device’s built-in collectors, with the choice of a discrete resistor providing the collector-emitter voltage. Additionally, the device can operate in either a single or a dual channel configuration, allowing for multiplexing. In the single channel configuration, the device’s collectors are configured with individual outputs, while in the dual channel configuration the collectors are connected in parallel.

The RN4988’s working principle is simple, as when the required collector-emitter voltage is applied, the device will produce direct current gain and voltage amplification. The voltage is initially applied to the collector-emitter junction, and the voltage that is then produced is amplified by the device. This amplification of the applied voltage is then used in a variety of applications to produce the desired output. In essence, this device is used in circuits as a pre-biased form of an amplifying transistor.

Overall, the RN4988 is an excellent pre-biased transistor array that offers high performance and advanced features. This device is suitable for a variety of automotive and industrial applications and is designed to provide improved reliability, performance and quick design time. It operates using BJT technology and requires a collector-emitter voltage for operation. Additionally, it is available in both through-hole and surface-mounted packages and is fully RoHS compliant. As a result, the RN4988 is an excellent choice for anyone looking for a reliable, high performance transistor array.

The specific data is subject to PDF, and the above content is for reference