RN4983FE,LF(CB Discrete Semiconductor Products

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RN4983FE,LF is a pre-biased transistor array designed for power amplifier applications in the automotive industry and other applications requiring excellent robustness, low power consumption and EMI/RFI performance.

The RN4983FE,LF is a three-stage transistor array which combines the functions of an output buffer and a bias network in one integrated design. It is composed of NPN and PNP transistors connected in a specific circuit configuration and has a pre-biased setup with a typical quiescent current of 0.89A.

The output stage is made up of two NPN transistors, which act as a power amplifier and provide a low source-to-drain resistance of 0.85 Ω. The input stage is composed of two PNP transistors connected in a push-pull configuration which acts as an pre-biased emitter-follower. The bias network is comprised of two NPN transistors and two resistors, which sets the operating point for the transistors.

The RN4983FE,LF is designed to be used in applications requiring robust operation in a wide range of temperatures. This transistor array also offers excellent EMI/RFI performance with an RF rejection ratio of 200 dB. This makes it ideal for use in mobile communications and other applications where low-noise operation is essential. It also offers excellent power efficiency, with a coefficient of efficiency greater than 0.95.

In summary, the RN4983FE,LF pre-biased transistor array is an excellent choice for use in a wide range of applications. It offers robust operation, excellent power efficiency, and EMI/RFI performance, making it an ideal choice for power amplifier applications in the automotive industry and other applications requiring excellent robustness, low power consumption, and EMI/RFI performance.

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