
Allicdata Part #: | RN4906LFTR-ND |
Manufacturer Part#: |
RN4906,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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RN4906, or the Pre-Biased Bipolar Junction Transistor (BJT) Array, is a versatile and powerful device commonly used in applications that require a certain level of flexibility and efficiency. By using an array of transistors in each package, this device allows you to create multiple, independent circuits without the need for multiple packages or components, thus reducing the size and cost of the circuit. This device is also perfect for applications that require a relatively high level of gain, such as radio frequency (RF) amplifiers, low noise amplifiers, and feedback systems.
The RN4906 is available in multiple configurations, such as a single, dual, or quad array, depending on your application needs. The single array package includes three transistors in one package, while the dual and quad packages have six and twelve transistors, respectively. No matter which configuration you go with, all versions include three terminals; a collector, base, and emitter. Depending on which configuration you go with, the number of connections will vary. For example, with the single array, there are only three connections, whereas with the dual and quad arrays, there are six and twelve connections, respectively.
When the RN4906 is operated, the base-emitter junction of the transistor is generally forward-biased, which means that a small current is injected into the base, allowing electrons to flow through the emitter and into the collector. This current flow through the emitter and collector helps amplify any signal inputted into the base, allowing a higher output signal to the front-end stage. This amplification process is what gives the RN4906 its power and makes it useful in a variety of applications, such as amplifier circuits.
The RN4906 is also very versatile in its application field. For example, it can be used in RF applications, as a low noise amplifier (LNA), as a feedback system, or in a wide range of signal conditioning applications. The RN4906 is also very useful in amplifier circuits, due to its high gain and low noise levels. Additionally, it is perfect for applications that need to optimize the response without introducing noise or unwanted distortion.
The RN4906 is an incredibly useful device in many different applications, thanks to its versatility and power. This device can provide multiple transistors in one package, allowing engineers to create multiple circuits without the need for multiple components or packages. Additionally, it provides ample gain and low noise levels/distortion, making it perfect for applications that demand a high level of performance. With its robust performance and wide application field, the RN4906 is an excellent option for engineers that need a high-performance, versatile device.
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