Allicdata Part #: | RN4905T5LFTTR-ND |
Manufacturer Part#: |
RN4905T5LFT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4905T5LFT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The RN4905T5LFT is a matched quad pre-biased array high voltage NPN transistor with a high peak current capacity. It is ideal for a variety of both commercial and industrial applications. This transistor array is offered in a miniature SOT-23 package, allowing for installation into small device designs that have limited board space.
The RN4905T5LFT features a high voltage and a high peak current capacity. This transistor can switch currents up to 1 A and its maximum current gain is 500. It has an operating temperature range of -65°C to 150°C and is capable of withstanding voltage up to 500 volts.
The RN4905T5LFT offers a matched quad pre-biased output, where the emitters are pre-biased to 500 mV. As such, the transistors need less power to produce more current. This make this transistor array ideally suited to applications requiring high power transistors, such as flight control systems, motor control, and professional audio equipment.
The working principle of the RN4905T5LFT is based on the bipolar junction transistor (BJT) architecture. A BJT is basically composed of two junctions between the base, collector, and emitter terminals. In operation, current flows from the emitter to the collector when a voltage is applied to the base. The collector voltage will then be higher than the emitter voltage, creating a voltage gain. By controlling the base current, the collector current can be modulated. This is what makes BJT-based devices such as the RN4905T5LFT so useful.
The RN4905T5LFT is a versatile multi-purpose transistor array with a wide range of applications. It can be used in both high-power switching and amplification circuits. In switching applications, the RN4905T5LFT can be used for controlling the speed of a motor, controlling the brightness of a light, or for powering a solenoid. In amplification circuits, the RN4905T5LFT can be used for boosting small signals, such as in amplifying low-impedance microphones or low-level signals from antennas.
The RN4905T5LFT is also suitable for a variety of industrial and manufacturing operations such as automotive, transportation, and aerospace systems. It can be used in motor control circuits and can also be used to power solenoids used in industrial machinery and automotive systems. Furthermore, the RN4905T5LFT can be used to control solenoids used in gas and water valves.
Overall, the RN4905T5LFT is a versatile multi-purpose transistor array with a high current capacity and high voltage capability. Its high power and matched quad pre-biased output make it ideal for a variety of both commercial and industrial applications and its wide operating temperature range makes it suitable for a range of operating environments. As such, it is an essential component for many designs employing transistors.
The specific data is subject to PDF, and the above content is for reference
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