
RN1113(T5L,F,T) Discrete Semiconductor Products |
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Allicdata Part #: | RN1113(T5LFT)TR-ND |
Manufacturer Part#: |
RN1113(T5L,F,T) |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.02587 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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The RN1113 (T5L,F,T) is a single, pre-biased bipolar junction transistor (BJT) and is often used for amplifying, switching, and various other types of operations. This device is constructed of two terminals, with each terminal being an intrinsic P-type and an N-type material. The P-type and N-type materials are combined and a base-emitter junction is formed; this junction is formed when the two materials are in close proximity. When a voltage is applied across the two terminals, current begins to flow between them.
The RN1113 (T5L,F,T) features a negative pre-bias which is a characteristic that is particularly advantageous because it allows the device to be used in applications where an alternate solution would require a more difficult and complicated circuit design. Negative pre-biased transistors are also known as “normally-off” transistors and they offer a better on/off ratio. They feature a reverse bias voltage (VceS) that is greater than 4V and this prevents the device from being accidentally turned on during the manufacturing process.
The working principle of the RN1113 (T5L,F,T) depends on its pre-biased structure. When the base voltage is lower than the voltage between the collector and the emitter, the transistor is said to be in the "off" state. In this state, no current flows from the collector to the emitter and the transistor remains open. When the base voltage is increased, the base-emitter voltage rises above the reverse bias voltage, which causes the transistor to turn on. This lowers the resistance between the collector and the emitter, allowing current to flow. The amount of current that can flow through the device is determined by the amount of base current applied.
The RN1113 (T5L,F,T) has a wide range of applications. It can be used in amplifying circuits, such as in audio amplifiers, radio receivers, and television amplifiers. Additionally, it can be used in switching circuits, such as transducers, fan control, and motor control. This device can also be used for power supply regulation, surge protection, and logic levels.
The RN1113 (T5L,F,T) is a versatile and reliable device that is suitable for use in a variety of applications. Its negative pre-bias characteristics allow for easy integration into circuit designs without requiring complex circuits, which makes it an ideal component for engineers, and its wide range of applications make it a top choice for designers of all types. Its reliable operation and versatility make the RN1113 (T5L,F,T) a great option for projects ranging from commercial to industrial.
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