RN1110,LF(CT Allicdata Electronics
Allicdata Part #:

RN1110LF(CT-ND

Manufacturer Part#:

RN1110,LF(CT

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W SSM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1110,LF(CT datasheetRN1110,LF(CT Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Description

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The RN1110 is a single pre-biased junctions Field Effect Transistor (FET). This device is a combination of a P-channel FET and an N-channel FET that are connected in parallel with a common control voltage. The two transistor elements are intended for use in creating a single output controlling device where one element acts as the pull-up transistor and the other element acts as the pull-down transistor. The overall device is capable of high-speed switching and is ideal for use in a wide range of automotive, consumer, and industrial applications.

The RN1110 also includes an integrated voltage regulator that can be used to maintain a steady voltage level at the FET’s control voltage pin. This feature helps ensure that the power consumption is kept to a minimum even when there are significant fluctuations in the power supply voltage.

The RN1110 is well-suited for applications that require a high-speed switch with clean on-off operation. Some specific applications that make particular use of the RN1110 include switching for power conversion equipment, power supply control and regulation, and DC-DC converters.

At the heart of the RN1110 is the basic CT application field and working principle. This application field involves two transistor elements, the P-channel FET and the N-channel FET. The basic principle is that when the control voltage is applied to these two elements, the current that flows between them will depend on the control voltage.

The P-channel FET is the pull-up element and it will conduct current when there is a positive voltage applied to the FET’s gate. The N-channel FET is the pull-down element and it will conduct current when a negative voltage is applied. Depending on which element is conducting the current, the current will either be diverted to the output or diverted away from the output.

In order to achieve fast switching speeds and high efficiency, the RN1110 is designed with an integrated voltage regulator. This voltage regulator ensures that an appropriate level of control voltage is maintained for the two FET elements, even when there are significant fluctuations in the supply voltage. The voltage regulator is effective at ensuring that the device can accurately switch states without any delays due to the supply voltage variations.

Overall, the RN1110 is a single pre-biased junction field effect transistor that is ideal for applications requiring a high-speed switch. This device is well-suited for automotive, consumer, and industrial applications and it can provide a steady level of control voltage to ensure fast switching and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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