Allicdata Part #: | S29WS064RABBHI010-ND |
Manufacturer Part#: |
S29WS064RABBHI010 |
Price: | $ 3.02 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M PARALLEL 84FBGA |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108M... |
DataSheet: | S29WS064RABBHI010 Datasheet/PDF |
Quantity: | 1000 |
200 +: | $ 2.74938 |
Series: | WS-R |
Packaging: | Tray |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (4M x 16) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 84-VFBGA |
Supplier Device Package: | 84-FBGA (11.6x8) |
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Memory Applications and Working Principles of S29WS064RABBHI010
S29WS064RABBHI010 is a type of nonvolatile memory that is used in a wide range of applications. It is a single-chip memory with a maximum storage capacity of 64 MB. It is used in embedded systems, automotive, industrial, and medical applications. It is also suitable for use in data acquisition and communication devices. Additionally, it can be used in space-constrained designs.
The S29WS064RABBHI010 is a synchronous, SRAM-based memory device. It has an integrated controller and synchronization circuitry. The controller provides features such as write protect, data bus direction, read/write sequencing, data width, and memory access functions. It also supports error-correcting code (ECC) to ensure data integrity.
The S29WS064RABBHI010 contains four main components: an SRAM array, a logic array, a control circuit, and an ECC processor. The SRAM array consists of eight banks of eight-bit words, with a total capacity of 64 MB. The memory cells are organized in a two-dimensional array. The logic array contains the logic and control circuits. The ECC processor performs data correction, data scrubbing and error detection.
The working principle of S29WS064RABBHI010 is based on the synchronous dynamic random access memory (SDRAM) technology. The chip is organized in multiple "pages," which are the smallest storage units. Each page consists of 8192 bytes of information that can be accessed simultaneously. When data is written to a page in S29WS064RABBHI010, it is first stored in an on-chip cache and then moved to the page buffer. After the page buffer is filled with data, it is written to the memory array. The memory array can also be accessed in parallel, which provides faster access.
To read data from the S29WS064RABBHI010, the device first receives the address of the desired page. The controller then fetches the data from the page buffer and sends it to the data bus. The requested data is then sent to the requesting device. The chip also supports multiplexed access, which allows multiple devices to access the same stored data at the same time.
In summary, S29WS064RABBHI010 is a nonvolatile memory that is used in embedded systems, automotive, industrial, medical, and other applications. It operates based on synchronous dynamic random access memory (SDRAM) technology and is composed of four main components: an SRAM array, a logic array, a control circuit, and an ECC processor. It supports multiplexed access and has a maximum capacity of 64 MB.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S29WS064RABBHI000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHI010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
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S29WS512PABBFW000 | Cypress Semi... | 9.75 $ | 1000 | IC FLASH 512M PARALLEL 84... |
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