S29WS256PABBAW000 Allicdata Electronics
Allicdata Part #:

S29WS256PABBAW000-ND

Manufacturer Part#:

S29WS256PABBAW000

Price: $ 6.71
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 84FBGA
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 10...
DataSheet: S29WS256PABBAW000 datasheetS29WS256PABBAW000 Datasheet/PDF
Quantity: 1000
200 +: $ 6.09239
Stock 1000Can Ship Immediately
$ 6.71
Specifications
Series: WS-P
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)
Description

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S29WS256PABBAW000, a type of memory, plays an important role in the communication and network system. The application field is wide, from high speed and large capacity storage system to automotive and industrial applications. In this article, the application field and working principle of S29WS256PABBAW000 will be discussed.

Application Field

S29WS256PABBAW000 has a wide range of applications, including high speed and large capacity storage systems. It can provide a reliable and high performance storage, which is beneficial for users who need large storage capacity. In addition, S29WS256PABBAW000 can also be used in automotive and industrial applications, such as chassis control, driver control, fuel injection system and other applications. Furthermore, it is also utilized in medical equipment, communication system, aerospace and military systems.

Working Principle

S29WS256PABBAW000 uses a split-gate Flash memory technology to store data. This means there are two independent gates on the memory cell, one is called the control gate, and the other is called the floating gate. When a voltage is applied to the control gate, the electrons are attracted to the floating gate and the current will be setup through the memory cell. When the voltage is removed from the control gate, the electrons that were attracted to the floating gate remain in the floating gate and are held there by an electrical field generated by the two gates. This data is now stored in the memory cell. When the same voltage is applied again to the control gate, the electrons in the floating gate will be attracted back to the control gate and the current path through the memory cell will be interrupted, indicating the data stored in the memory cell has been read out.

Conclusion

In conclusion, S29WS256PABBAW000 is an ideal choice for storage and automotive applications. It has a wide range of application fields, and it works using the split-gate Flash memory technology, which provides a reliable and high performance data storage and read capabilities. As such, it is widely used in a wide range of applications and fields.

The specific data is subject to PDF, and the above content is for reference

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