S29WS512P0SBFW003

Series:	WS-P
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (32M x 16)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	60ns
Access Time:	80ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-25°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	84-VFBGA
Supplier Device Package:	84-FBGA (11.6x8)

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Memory Application Field and Working Principle of S29WS512P0SBFW003The S29WS512P0SBFW003 is a type of memory that is commonly used in a number of computer and other electronic applications. It can be found in cell phones, digital cameras, personal navigation devices, and other mobile devices, as well as in medical devices and military communication systems. This type of memory is commonly used for a variety of data storage and retrieval applications, ranging from storing video and picture data to providing random access memory for processor operations. This article will discuss the general application fields and working principle of the S29WS512P0SBFW003 memory.The S29WS512P0SBFW003 memory provides high density non-volatile storage, which makes it an ideal choice for applications that require secure and fast data storage. It is well suited for applications where data needs to be stored and retrieved quickly, such as in multimedia applications and database operations. The memory also offers excellent reliability, making it suitable for a variety of applications, including mission-critical systems where data integrity is paramount.The S29WS512P0SBFW003 is a type of non-volatile memory, which means that the data stored in the memory remains intact even when the power is turned off. This makes the memory ideal for applications that require data to be retained in the event of a power interruption. The memory also offers excellent read/write performance and is commonly used for applications that require frequent access to large amounts of data, such as multimedia applications and video processing.The working principle of the S29WS512P0SBFW003 memory is relatively simple. The memory consists of a series of cells, each of which stores one bit (1 or 0) of data. Data is written to and read from the memory by addressing the individual cells using a set of control signals. These signals are used to control the operation of the memory, allowing the data to be written and read from the memory with minimal latency. The memory is designed for fast and efficient data transfer, allowing it to be used in applications where quick access to data is required.In addition to its fast and efficient operation, the S29WS512P0SBFW003 is also highly reliable. The memory is designed to provide data integrity even in the event of a power interruption, ensuring that data stored in the memory is protected. This makes the S29WS512P0SBFW003 an excellent choice for mission-critical applications and systems where data protection is critical.In summary, the S29WS512P0SBFW003 is a type of non-volatile memory that is commonly used in a variety of applications. This type of memory provides high density storage, excellent read/write performance, and excellent reliability, making it an ideal choice for a wide range of applications. The S29WS512P0SBFW003 is commonly used in a variety of applications, such as multimedia applications, medical devices, and military communication systems. The memory works by using a set of control signals to address individual cells, allowing data to be written and read from the memory with minimal latency. In addition, the memory is designed to provide data integrity even in the event of a power interruption.

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