Allicdata Part #: | S29WS256RAABHW200E-ND |
Manufacturer Part#: |
S29WS256RAABHW200E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 104MHZ |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 10... |
DataSheet: | S29WS256RAABHW200E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | WS-R |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
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S29WS256RAABHW200E is a type of memory, which is widely used across a variety of applications. This type of memory is ideal for applications that require high-density data storage and fast access times, such as digital cameras, mobile phones, and other digital systems. The S29WS256RAABHW200E provides a high-density storage of up to 256M bytes and can be used in both read and write operations.
The S29WS256RAABHW200E contains a variety of technologies designed to improve the speed and efficiency of data storage and retrieval. Wireless flash memory technology is used in this type of memory in order to enable high-speed data transfer rates between the memory chip and the device using it. The S29WS256RAABHW200E also uses a new architecture called “True Parallel Architecture” which allows for multiple accesses to the same data at the same time, allowing for a faster and more efficient storage and retrieval of data.
In addition, cyclic redundancy check (CRC) and multi-level cell (MLC) technologies are implemented in the S29WS256RAABHW200E memory in order to improve the reliability and robustness of the data stored in the device. The MLC technology also improves the amount of data that can be stored on a single chip and reduces the amount of power consumed in order to read and write data.
The S29WS256RAABHW200E memory provides a variety of features that make it an ideal choice for many applications. It is highly reliable, with an integrated error correction code (ECC) that prevents data corruption and increases data security. In addition, it offers fast read and write speeds, letting users quickly and easily access data. The S29WS256RAABHW200E memory also provides a low power consumption, which allows for longer device battery life.
The working principle of S29WS256RAABHW200E memory is simple. It relies on a series of resistive elements that are connected in a specific order. When a voltage is applied to the memory, the resistive elements activate, creating an electric field. This field affects the alignment of the electronic charges in the device, allowing data to be stored and retrieved.
In summary, the S29WS256RAABHW200E is an ideal type of memory for applications requiring high-density data storage and fast access times. It has a variety of features that increase reliability, robustness and speed while also reducing power consumption. This type of memory is used in a wide range of applications, such as digital cameras, mobile phones, and other digital systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S29WS128P0PBFW000 | Cypress Semi... | 9.65 $ | 182 | IC FLASH 128M PARALLEL 84... |
S29WS064RABBHI000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHI010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS256P0SBFW002 | Cypress Semi... | 6.31 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBFW003 | Cypress Semi... | 6.66 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBAW000 | Cypress Semi... | 6.71 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBAW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS128PABBFW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBFW000 | Cypress Semi... | 7.67 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW003 | Cypress Semi... | 8.58 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0PBFW000 | Cypress Semi... | -- | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512PABBFW000 | Cypress Semi... | 9.75 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0PBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0SBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS128N0PBFW010E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH NOR 84FBGA |
S29WS256P0PBFW000 | Cypress Semi... | 8.46 $ | 316 | IC FLASH 256M PARALLEL 84... |
S29WS256R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS512R0SBHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW200 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS128P0SBFW000 | Cypress Semi... | -- | 7118 | IC FLASH 128M PARALLEL 84... |
S29WS256P0SBFW000 | Cypress Semi... | -- | 110 | IC FLASH 256M PARALLEL 84... |
S29WS256P0LBFW000 | Cypress Semi... | 9.68 $ | 200 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW000 | Cypress Semi... | -- | 200 | IC FLASH 512M PARALLEL 84... |
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