S29WS064RABBHW010 Allicdata Electronics
Allicdata Part #:

S29WS064RABBHW010-ND

Manufacturer Part#:

S29WS064RABBHW010

Price: $ 3.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 84FBGA
More Detail: FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108M...
DataSheet: S29WS064RABBHW010 datasheetS29WS064RABBHW010 Datasheet/PDF
Quantity: 1000
200 +: $ 2.74938
Stock 1000Can Ship Immediately
$ 3.02
Specifications
Series: WS-R
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)
Description

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S29WS064RABBHW010 is a part of high-speed static random access memory (SRAM) that is designed for general-purpose applications. It is manufactured and marketed by StarCore. It is characterized by a high speed, low power consumption and high memory size, making it suitable for use in a wide range of applications including digital camera, networking equipment, and consumer electronics.

The S29WS064RABBHW010 comes in 8-pin, 14-pin and 20-pin packages, which facilitates easy integration into consumer devices. The chip features a 64KB SRAM array and organization, including 16k words of 8-bit, 32K words of 4-bit and 32K words of 1-bit. It also contains an integrated clock input pin for memory refresh, a write enable pin (WE), and two mode selection pins for low power stop. The chip operates from a single 1.8V to 3.6V voltage source and is capable of operation from 2.7V down to 1.8V.

The working principle of the S29WS064RABBHW010 is based on a static random access memory, specifically a 64KB SRAM array. This basically means that the chip has a data array with 64KB of data space. The data is stored in 8-bit, 4-bit and 1-bit words, and can be accessed randomly by a single read/write command. Data is stored in the array for an indefinite period until it is either written over, or the memory is cleared. The SRAM also contains a clock input pin for memory refresh, a write enable pin (WE) and two mode selection pins for low power stop. The chip operates from a single 1.8V to 3.6V voltage source and is capable of operation from 2.7V down to 1.8V.

The S29WS064RABBHW010 is suitable for use in a wide range of applications, ranging from digital imaging, netwo9rking equipment, to consumer electronics. It is capable of operating at temperatures between -40°C to +85°C, making it ideal for operation in harsh environment. In addition, the chip features a low current dissipations of 100µA (typ), and an ultra-low power operation of 17µA (typ).

The S29WS064RABBHW010 is an ideal choice for applications requiring high speed and small form factor, such as digital cameras and smart phones. Its integrated clock input pin ensures a reliable refresh of data stored in the memory array. The chip is also designed for low power operation, with a current dissipation of only 100µA (typ). The S29WS064RABBHW010 is also capable of operating in temperatures ranging from -40°C to +85°C, making it suitable for a wide range of applications.

To summarize, the S29WS064RABBHW010 is a high speed static random access memory suitable for general-purpose applications. It is characterized by its low power dissipation, high memory size, high-refresh rate and low current consumption. It is suitable for use in digital cameras, network equipment, and other consumer electronics applications. It is also capable of operating in extreme environments ranging from -40°C to +85°C. All these features make the S29WS064RABBHW010 the ideal choice for high-performance memory solutions.

The specific data is subject to PDF, and the above content is for reference

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