Allicdata Part #: | S29WS512R0SBHW200E-ND |
Manufacturer Part#: |
S29WS512R0SBHW200E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 104MHZ |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 10... |
DataSheet: | S29WS512R0SBHW200E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | WS-R |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
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Memory is an essential component of computers and other digital devices. Its purpose is to store data in an organized and efficient manner, allowing rapid access and retrieval of information. The S29WS512R0SBHW200E memory is a type of volatile random access memory (RAM) used in many applications.
To understand the application field and working principle of the S29WS512R0SBHW200E memory, one must first understand the basics of RAM. The term RAM stands for random access memory and refers to a type of electronic computer memory that can be randomly accessed. This is in contrast to sequential access memory (SAM) which stores data in a linear fashion and must be accessed in a specific order. RAM is the most common type of memory found in computers and other digital devices and is used for high speed data access.
The S29WS512R0SBHW200E memory is a type of SAR RAM used in many applications. It is an economical form of DRAM (dynamic random access memory) that uses a single capacitor to store a bit (Represented by either 0 or 1). The S29WS512R0SBHW200E is capable of storing up to 512 megabytes of data, making it well suited for applications in which large amounts of data need to be quickly accessed and stored.
The S29WS512R0SBHW200E memory is widely used in embedded systems, such as those found in automobiles, medical equipment, and industrial control systems. Its ability to quickly and efficiently store large amounts of data makes it ideal for these applications. In addition, the S29WS512R0SBHW200E is used in some computers and servers due to its high speed and large storage capacity.
The working principle of the S29WS512R0SBHW200E memory is based on the use of electrical charge stored in capacitors to represent digital data. A single capacitor is used to store one bit of data, with a 0 indicating a low voltage (0V) and a 1 indicating a high voltage (5V). When a 0 or 1 is written to a bit of memory, the capacitor is charged or discharged to reflect the data. When the memory is read, the voltage of the capacitor is read and the data is retrieved.
The S29WS512R0SBHW200E has several features that make it advantageous over other types of RAM. The most notable is its low power consumption, which can reduce energy costs in applications that require large amounts of memory. Additionally, its high speed access and the ability to maintain data integrity when power is removed are beneficial to based systems.
The S29WS512R0SBHW200E memory is an effective and economical form of DRAM used in many different applications. Its ability to quickly store and retrieve large amounts of data make it ideal for use in embedded systems and computers. Its low power consumption and data stability features make it a viable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S29WS128P0PBFW000 | Cypress Semi... | 9.65 $ | 182 | IC FLASH 128M PARALLEL 84... |
S29WS256P0PBFW000 | Cypress Semi... | 8.46 $ | 316 | IC FLASH 256M PARALLEL 84... |
S29WS128P0SBFW000 | Cypress Semi... | -- | 7118 | IC FLASH 128M PARALLEL 84... |
S29WS256P0SBFW000 | Cypress Semi... | -- | 110 | IC FLASH 256M PARALLEL 84... |
S29WS256P0LBFW000 | Cypress Semi... | 9.68 $ | 200 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW000 | Cypress Semi... | -- | 200 | IC FLASH 512M PARALLEL 84... |
S29WS256R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS512R0SBHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW200 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS128N0PBFW010E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH NOR 84FBGA |
S29WS256P0SBFW002 | Cypress Semi... | 6.31 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBFW003 | Cypress Semi... | 6.66 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBAW000 | Cypress Semi... | 6.71 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBAW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS128PABBFW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBFW000 | Cypress Semi... | 7.67 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW003 | Cypress Semi... | 8.58 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS064RABBHI000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHI010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS512P0PBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0SBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0PBFW000 | Cypress Semi... | -- | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512PABBFW000 | Cypress Semi... | 9.75 $ | 1000 | IC FLASH 512M PARALLEL 84... |
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