S29WS512P0SBFW000

Series:	WS-P
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (32M x 16)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	60ns
Access Time:	80ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-25°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	84-VFBGA
Supplier Device Package:	84-FBGA (11.6x8)

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Introduction

The S29WS512P0SBFW000 is an advanced memory storage chip from Micron Technology. It is a 128Mb (16M X 8) Nand Flash memory that uses 8-bit access and includes a Serial Peripheral Interface (SPI). It is an industry-standard Flash memory with up to 32Mb of data storage for small form-factor digital products and applications.

Application Field

The S29WS512P0SBFW000 is available in multiple package configurations and is compliant with a wide range of industry standards. This makes it ideal for a variety of applications, including mobile phones and other wireless devices, digital cameras, automotive electronics, medical equipment, and other consumer electronics. The chip is also suitable for embedded applications, such as bootloaders, BIOS/RTOS, simple applications and/or data storage. In addition, the S29WS512P0SBFW000 is programmed for reliable performance and has an extended temperature range for extended life operation.

Work Principle

The S29WS512P0SBFW000 is a single-level cell (SLC) NAND flash memory that uses a 4-bit multiplexing access scheme. It features fast read and write speeds, low power consumption, and active discharge on power-off. The chip features a fast initialization and performance boost when used in systems such as compact digital cameras and multimedia devices. Its on-chip write cache controller can improve performance by approximately 18%.The chip supports up to 32 addresses and it is organized as eight blocks of sixteen pages each. Each page consists of 256 bytes of data and 16 bytes of spare bytes which are used for error correction and bad block management. The chip also has a row and column address assuring addressability.The S29WS512P0SBFW000 includes a built-in error correction system. This enables the chip to detect and correct errors with a low bit error rate (BER). It also has a bad block management system that can detect and replace blocks of bad data.

Conclusion

The S29WS512P0SBFW000 is an advanced memory storage chip from Micron Technology. It is suitable for small form-factor products and embedded applications. The chip uses a 4-bit multiplexing access scheme and it supports up to 32 addresses. It has a built-in error correction system and a bad block management system. This makes it an ideal solution for a variety of applications, especially in the consumer electronics and automotive sectors.

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