Allicdata Part #: | 428-4502-ND |
Manufacturer Part#: |
S29WS256P0LBFW000 |
Price: | $ 9.68 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 84FBGA |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 54... |
DataSheet: | S29WS256P0LBFW000 Datasheet/PDF |
Quantity: | 200 |
1 +: | $ 8.80110 |
Series: | WS-P |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 54MHz |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 80ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 84-VFBGA |
Supplier Device Package: | 84-FBGA (11.6x8) |
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Memory is one of the most important components in the modern computer. It is used to store large amounts of data, including code and data. The S29WS256P0LBFW000 memory is a high-performance memory technology used in many applications. In this article, we\'ll discuss the application fields and working principle of S29WS256P0LBFW000 memory.
The S29WS256P0LBFW000 memory is an advanced memory technology based on flash memory. It is a three-dimensional stacked memory composed of individual two-dimensional bit cells. This type of memory can contain up to 256GB of data and is typically used in servers and high-end computing applications. The memory is capable of speeds up to 333MHz, and can operate with a voltage of 1.8V or 3.3V.
In terms of applications, S29WS256P0LBFW000 memory is used in servers and high-performance computing. It can also be used to store data in a variety of applications, such as computers, mobile devices, and game consoles. The high performance of this memory technology makes it suitable for use in complex applications, such as artificial intelligence and machine learning.
In terms of working principle, S29WS256P0LBFW000 memory is based on NAND flash technology. NAND flash stores data in tiny memory cells known as “floating gates.” Each memory cell contains two transistors and a floating gate. When voltage is applied to the transistors, a charge is induced in the floating gate. This charge is stored as long as the voltage is maintained, thus allowing the memory cell to retain its stored data.
When data is written to the memory, the charge stored in the individual memory cells is changed. This process is called programming. To erase the data stored in the memory, a voltage is applied to the memory cells. This process is called erasing. In order to program or erase data to or from the memory, an erase cycle must be performed.
Since the S29WS256P0LBFW000 memory is based on NAND flash technology, it is much more reliable and efficient than traditional DRAM memory. It is also faster and can store more data than DRAM-based memory. Furthermore, it is much more power-efficient than DRAM, making it an ideal choice for power-sensitive applications.
In conclusion, the S29WS256P0LBFW000 memory is an advanced memory technology used in many server and high-performance computing applications. It is a three-dimensional stacked memory composed of individual two-dimensional bit cells, and can store up to 256GB of data. It is based on NAND flash technology and is much faster, more reliable, and more power-efficient than DRAM.memory. Thus, it is a very useful and reliable memory technology for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S29WS128P0PBFW000 | Cypress Semi... | 9.65 $ | 182 | IC FLASH 128M PARALLEL 84... |
S29WS256P0PBFW000 | Cypress Semi... | 8.46 $ | 316 | IC FLASH 256M PARALLEL 84... |
S29WS128P0SBFW000 | Cypress Semi... | -- | 7118 | IC FLASH 128M PARALLEL 84... |
S29WS256P0SBFW000 | Cypress Semi... | -- | 110 | IC FLASH 256M PARALLEL 84... |
S29WS256P0LBFW000 | Cypress Semi... | 9.68 $ | 200 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW000 | Cypress Semi... | -- | 200 | IC FLASH 512M PARALLEL 84... |
S29WS256R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW000E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS256RAABHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 10... |
S29WS512R0SBHW200E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW000 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS512R0SBHW200 | Cypress Semi... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 10... |
S29WS128N0PBFW010E | Cypress Semi... | 0.0 $ | 1000 | IC FLASH NOR 84FBGA |
S29WS256P0SBFW002 | Cypress Semi... | 6.31 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBFW003 | Cypress Semi... | 6.66 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBAW000 | Cypress Semi... | 6.71 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS128P0PBAW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS128PABBFW000 | Cypress Semi... | 7.65 $ | 1000 | IC FLASH 128M PARALLEL 84... |
S29WS256PABBFW000 | Cypress Semi... | 7.67 $ | 1000 | IC FLASH 256M PARALLEL 84... |
S29WS512P0SBFW003 | Cypress Semi... | 8.58 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS064RABBHI000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHI010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW000 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS064RABBHW010 | Cypress Semi... | 3.02 $ | 1000 | IC FLASH 64M PARALLEL 84F... |
S29WS512P0PBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0SBFW0002 | Cypress Semi... | 14.2 $ | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512P0PBFW000 | Cypress Semi... | -- | 1000 | IC FLASH 512M PARALLEL 84... |
S29WS512PABBFW000 | Cypress Semi... | 9.75 $ | 1000 | IC FLASH 512M PARALLEL 84... |
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