S29WS512R0SBHW000 Allicdata Electronics
Allicdata Part #:

S29WS512R0SBHW000-ND

Manufacturer Part#:

S29WS512R0SBHW000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL 104MHZ
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 10...
DataSheet: S29WS512R0SBHW000 datasheetS29WS512R0SBHW000 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: WS-R
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Description

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Memory is a way of storing and recalling data computer usage. It can be divided into two main categories: volatile memory and non-volatile memory. Volatile memory refers to memory that is lost once power is turned off or removed, while non-volatile memory retains data even after power is removed. The S29WS512R0SBHW000 is a type of non-volatile memory and is typically used in embedded applications.

Application Field

The S29WS512R0SBHW000 is a type of non-volatile memory, meaning it will retain data even after power is removed. This makes it an ideal choice for embedded applications, where factors such as continuous power and data retention are paramount. It is also an ideal choice for applications where data security is important, such as banking, military, and other secure applications.

The S29WS512R0SBHW000 is designed for applications that require high performance, low power, and reliability. It is capable of delivering fast access times and large capacities, up to 32GB, even in the most demanding of applications. Furthermore, its 16-bit modes allow for fast data transfers and convenient programming.

Working Principle

The S29WS512R0SBHW000 non-volatile memory works on the principle of electrical charge to maintain the data. It stores data in the form of electrical charges that do not get affected by power outages or fluctuations. When a voltage is applied to these memory cells, the stored charge is converted into an electrical signal. This signal is then read and data is retrieved from the memory.

The S29WS512R0SBHW000 also features wear leveling, which is a feature that ensures that data is distributed evenly across all memory cells. This ensures maximum reliability and data integrity over the long term. Furthermore, the memory has robust error correction and detection features, so that any data that is written to it will be maintained as flawlessly and protected against errors.

Benefits

The benefits of using the S29WS512R0SBHW000 non-volatile memory are that it is highly reliable, low power, and fast. This makes it an ideal choice for embedded applications where data storage and reliability is paramount. Furthermore, it is very easy to program and use, which makes it a great choice for development teams. Finally, its wear-leveling feature ensures maximum data integrity over the long term.

Conclusion

The S29WS512R0SBHW000 is a type of non-volatile memory that is highly reliable and low power. It is typically used in embedded applications where data storage and reliability is paramount, and is capable of delivering high performance and reliable data retention. Furthermore, it features wear-leveling and robust error correction and detection, so that data is always reliably stored and protected against errors.

The specific data is subject to PDF, and the above content is for reference

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