S29WS512P0PBFW000 Allicdata Electronics
Allicdata Part #:

428-4070-ND

Manufacturer Part#:

S29WS512P0PBFW000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL 84FBGA
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 66...
DataSheet: S29WS512P0PBFW000 datasheetS29WS512P0PBFW000 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: WS-P
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)
Description

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S29WS512P0PBFW000 Application Field and Working Principle of Memory

Memory (polynucleotide) semiconductor memory devices are indispensable components of electronic products. As one type of memory module, S29WS512P0PBFW000 is designed to enable fast, reliable data input and output. This article will discuss the application field and woking principle of the S29WS512P0PBFW000 memory.

First of all, let\'s talk about the primary application field of S29WS512P0PBFW000. It is mainly used in consumer electronics products such as smartphones, tablets, cameras and game consoles. Its large capacity and high performance make it ideal for these applications.

In terms of its working principle, we can divide it into two categories: static and dynamic RAM. Static RAM (SRAM) is a type of random-access memory that stores data by utilizing metal-oxide-semiconductor (MOS) logic gates and six transistors to form a latch. The latch is used to maintain a data bit in its memory cell until it is changed. SRAM takes less power to operate than dynamic RAM (DRAM) and is usually used in embedded memory devices. DRAM, on the other hand, stores data using a single transistor that is paired with a capacitor for each cell. This reduces the physical size of the device, making it ideal for high-capacity memory storage. The S29WS512P0PBFW000 memory module contains both SRAM and DRAM.

In conclusion, the S29WS512P0PBFW000 memory module is an ideal choice for embedded memory applications as it offers high performance and large capacity. It is mainly used in consumer electronics products such as smartphones, tablets, cameras and game consoles. Furthermore, it consists of SRAM and DRAM, each of which has its own working principle. With this information in mind, we hope you can make an informed decision on which type of memory device is right for your application.

The specific data is subject to PDF, and the above content is for reference

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