S29WS128P0PBFW000 Allicdata Electronics
Allicdata Part #:

428-4013-ND

Manufacturer Part#:

S29WS128P0PBFW000

Price: $ 9.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 84FBGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 66M...
DataSheet: S29WS128P0PBFW000 datasheetS29WS128P0PBFW000 Datasheet/PDF
Quantity: 182
1 +: $ 8.77590
Stock 182Can Ship Immediately
$ 9.65
Specifications
Series: WS-P
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)
Description

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S29WS128P0PBFW000 is a type of memory module that combines the advantages of both Flash and NOR technologies. It has the advantages of high speed, low power consumption, long reliability, non-volatility and high security. The S29WS128P0PBFW000 is widely used in the embedded and industrial segment.

The S29WS128P0PBFW000 memory module is a single-chip Flash memory solution and can be used as a substitute for many popular devices, such as the FPGA and EPROM, in applications that require fast performance, low power consumption and high reliability. This type of device is used in a wide range of products, including cellular phones, automotive navigation systems, digital cameras, GPS devices and medical equipment. The S29WS128P0PBFW000 memory module also offers a great solution for industrial-grade applications.

The S29WS128P0PBFW000 memory modules are typically arranged in rows and columns. The modules are designed with a dedicated write enable line, which allows it to enable or disable the write operations. The memory modules have a read/write cycle of 25ns, giving them the capability of storing up to 64Mb of data. It also offers low stand-by power consumption of 35mW and an access time of 75ns.

The S29WS128P0PBFW000 memory module provides features such as ECC, hardware write protect, hardware/software write protect, on-die boot ROM and 8 bit/16 bit address select write mode. It also includes on-chip error correction code (ECC) support and is available in TSOP-48 packages. The S29WS128P0PBFW000 device supports Single Level Cell (SLC) and Multi-Level Cell (MLC) architecture.

The basic working principle behind the S29WS128P0PBFW000 memory module is that it allows the user to access data in the form of bytes and words. The user can also write information in the flash memory using the write cycle, which is enabled by the dedicated write enable line. The write operation is completed in two stages, which is the write enable and the write cycle. Once the write enable stage is completed, the write cycle can begin. During the write cycle, the user must provide the valid address and data which will be written to the memory. The write cycle is then completed when the write enable is deactivated. The data is stored in the flash memory and can be accessed by the user.

In summary, the S29WS128P0PBFW000 memory module is an ideal choice for industrial-grade applications due to its high speed, low power consumption and long reliability. It is an effective substitute for many popular devices that require fast read/write performance and high reliability. The device supports both single level cell and multi-level cell architecture and offers features such as ECC, hardware write protect, hardware/software write protect, on-die boot ROM and 8 bit/16 bit address select write mode. The S29WS128P0PBFW000 basic working principle involves accessing data in the form of bytes and words via the write cycle enabled by the dedicated write enable line.

The specific data is subject to PDF, and the above content is for reference

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