S34ML04G100TFI000

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S34ML04G100TFI000 is a type of memory from the 3D NAND technology family that is produced by extremely advanced flash technologies. It is a 4-bit-per-cell device and offers uses better write performance and read retention. The device is organized in 16 die per package, each die contains four 32 GB NAND planes organized in 64 planes.

Application Field

S34ML04G100TFI000 is widely used in a variety of applications including embedded devices, consumer applications, server-level storage and industrial disk arrays. They are suitable for extended temperature ranges, low-power requirements, low-voltage operation and low latency read operations.

The device supports the standard Open NAND Flash Interface (ONFI) which offers an industry standard command set, minimize talk time and offers a degree of scalability for future devices. The device is also a great choice for system designers who require 32GB in a single chip for their designs. The device has a very small footprint and provides excellent memory bandwidth.

Working Principle

The core internal architecture of S34ML04G100TFI000 is NAND, meaning that it uses negative-AND gates to store data. Each NAND gate consists of two field effect transistors, and the NAND gates are electrically linked together in a specific way to form a circuit of logic gates. When the device reads its data, the logic gates come together and create an output that reflects the stored value.

The device is divided into cells that each represent either a single bit (1) or a zero (0). To write data, the appropriate voltage level is applied to the cell and the resistance at that point changes to correspond to the amount of voltage applied. When the device reads the data, it is able to determine the corresponding value based on the resistance.

S34ML04G100TFI000 also has a few differences compared to earlier NAND devices. It uses the BufferRAM technology which utilizes four planes per die. These planes are used to separate areas of data from the other planes and allow for faster read operations. In addition, the device also uses an 8-bit voltage level that offers an increased data storage capacity when compared to earlier NAND devices.

Overall, S34ML04G100TFI000 is a reliable and powerful memory with many features and uses. Its high capacity and advanced internal architecture make it an ideal choice for a variety of applications.

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