SCT3022ALGC11 Allicdata Electronics
Allicdata Part #:

SCT3022ALGC11-ND

Manufacturer Part#:

SCT3022ALGC11

Price: $ 29.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET NCH 650V 93A TO247N
More Detail: N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-...
DataSheet: SCT3022ALGC11 datasheetSCT3022ALGC11 Datasheet/PDF
Quantity: 15
1 +: $ 26.51040
Stock 15Can Ship Immediately
$ 29.16
Specifications
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 339W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V
Vgs (Max): +22V, -4V
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V
Series: --
Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V
Drive Voltage (Max Rds On, Min Rds On): 18V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SCT3022ALGC11 is a single N-Channel MOSFET that is used in many electronic devices, such as switching regulators, motor controls, embedded controllers and other industrial applications. It is a high voltage, high current MOSFET, with a maximum breakdown voltage of 450V, maximum on-state drain current of 22A, and maximum drain-source on-state resistance of 0.004 ohms.

The SCT3022ALGC11 is manufactured by STMicroelectronics, and is available in a leadless package for easy mounting and soldering. It has a maximum power dissipation of 288W, an operating temperature range between -55°C and 150°C, a drain-source breakdown voltage of 400V, and a gate to source threshold voltage of 3.5V.

The SCT3022ALGC11 is a type of MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor, which is a type of transistor used to control electrical signals. Its function is to act as a switch, controlling the flow of current between two terminals. When a bias voltage is applied to the gate of the MOSFET, the MOSFET switches on and conducts current between the source and drain terminals.

The working principle of the SCT3022ALGC11 is based on the principle of depletion mode MOSFETs, which are three terminal devices that are used in many apps in switching, power management and signal processing. A depletion mode MOSFET consists of three layers: a gate, a source and a drain. The gate layer is composed of a metal or a polysilicon, and the source and drain layers are composed of silicon. When a positive voltage is applied to the gate, it forms an electric field which forces the conduction path between the source and the drain to be blocked, thus stopping the flow of current. When a negative voltage is applied, the electric field is reversed, forcing the conduction path between the source and the drain to be opened, thus allowing current flow. The SCT3022ALGC11 follows this same principle - by applying a voltage to the gate, the current flow between the source and the drain can be regulated.

The SCT3022ALGC11 is a versatile device which can be used for a number of applications including motor control, motor drivers, power supplies, motor speed control, embedded controllers, voltage regulator circuits, and many more. It is capable of operating at high temperatures and high voltages and is available in a standard leadless package, making it ideal for applications where space is a factor. Its low on-state resistance and high breakdown voltage make it a very efficient device.

In conclusion, the SCT3022ALGC11 is a high voltage MOSFET with a wide range of applications. It can be used in switching, motor, and power management applications, and is available in a standard leadless package. Its low on-state resistance and high breakdown voltage make it an efficient device, and it is capable of operating at high temperatures and voltage levels.

The specific data is subject to PDF, and the above content is for reference

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