
Allicdata Part #: | SCT3040KLGC11-ND |
Manufacturer Part#: |
SCT3040KLGC11 |
Price: | $ 18.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET NCH 1.2KV 55A TO247N |
More Detail: | N-Channel 1200V 55A (Tc) 262W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 15 |
1 +: | $ 16.53750 |
Vgs(th) (Max) @ Id: | 5.6V @ 10mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247N |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 262W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1337pF @ 800V |
Vgs (Max): | +22V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 18V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 20A, 18V |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SCT3040KLGC11, a Silicon Carbide power MOSFET, is designed to be a highly efficient and cost-effective choice for power supplies, motor controls and other high-power applications. In this article, we will discuss the application field and working principle of the SCT3040KLGC11.
Application of the SCT3040KLGC11
The SCT3040KLGC11 is well-suited for a variety of power applications. It is an excellent choice for low voltage DC-DC converters, providing higher efficiency, improved thermal management, and lower power losses. The SCT3040KLGC11 is perfect for high-speed motor controls, providing excellent current and voltage regulation. Furthermore, it is used in many power supply applications due to its low on-resistance, high current-handling capability, and high-speed switching. The SCT3040KLGC11 can be used in a wide range of applications, such as automotive, renewable energy, solar, inverters, and high-voltage transformers.
Working Principle of the SCT3040KLGC11
The SCT3040KLGC11 is a high power, fast switching, low on-resistance MOSFET. It is made up of several components, including a dielectric layer, gate, source, and drain. The dielectric layer is an insulating layer that prevents the gate voltage from passing through to the source and drain. The gate is essentially a switch that controls the flow of current when the voltage applied is sufficient to overcome the gate threshold voltage. The source and drain are the two terminals of the MOSFET that allow the current to flow when the gate is activated.
When a voltage is applied to the gate of the SCT3040KLGC11, a voltage gradient is created across the dielectric layer, which attracts electrons from the drain to the gate. This creates an inversion layer between the source and the drain and acts as a conducting channel for the current. The current flows from the drain to the source and is controlled by the applied gate voltage. When the gate voltage is removed, the inversion layer disappears and the MOSFET is turned off.
To put it in simpler words, the SCT3040KLGC11 works as an electronic switch which can be activated and deactivated using a small voltage on its gate. When the gate voltage is applied, the inversion layer is created on the MOSFET\'s dielectric layer, allowing current to pass through the device. When the gate voltage is removed, the inversion layer disappears, blocking the current and turning the device off.
Conclusion
The SCT3040KLGC11 is a fast-switching, low on-resistance MOSFET that is suitable for a variety of high power applications. It is an excellent choice for low voltage DC-DC converters, motor controls, and other power supply applications. It works on the principle of creating an inversion layer between the source and drain, when a voltage is applied to the gate of the MOSFET. This inversion layer acts as a conducting channel for current, when the gate voltage is applied, and is blocked when the voltage is removed, turning the device off.
The specific data is subject to PDF, and the above content is for reference
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