SCT3080ALGC11 Allicdata Electronics
Allicdata Part #:

SCT3080ALGC11-ND

Manufacturer Part#:

SCT3080ALGC11

Price: $ 8.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 650V 30A TO247
More Detail: N-Channel 650V 30A (Tc) 134W (Tc) Through Hole TO-...
DataSheet: SCT3080ALGC11 datasheetSCT3080ALGC11 Datasheet/PDF
Quantity: 15
1 +: $ 7.51590
10 +: $ 6.76494
25 +: $ 6.16367
100 +: $ 5.56233
250 +: $ 5.11134
500 +: $ 4.66035
Stock 15Can Ship Immediately
$ 8.27
Specifications
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 134W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V
Vgs (Max): +22V, -4V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V
Series: --
Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V
Drive Voltage (Max Rds On, Min Rds On): 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SCT3080ALGC11 is a specialized field effect transistor (FET) from SCT Semiconductor that is primarily used to create low-side switches. It is a single FET device that utilizes an enhancement mode MOSFET structure along with a low on-resistance. Its versatile design makes it ideal for a host of applications, including logic interface switch and driver, DC to DC converters, home appliances, DC motor control, charger control and power switch applications, among others. The SCT3080ALGC11 is a low-side FET switch, which means it works by turning off power to the load rather than turning on power to it, as a regular switch would. Additionally, the SCT3080ALGC11 is also capable of functioning as a driver and controlling the power of multiple loads.

The primary objective of the SCT3080ALGC11 is to reduce the voltage drops across a switch during operation in order to increase efficiency. This is accomplished through its low on-resistance and the low gate charge. The low on-resistance helps to limit the power losses in the switch, while the low gate charge decreases the amount of power required to turn the switch on and off. Additionally, the SCT3080ALGC11 also comes with a short circuit protection feature to help protect against short circuit events.

The SCT3080ALGC11 utilizes an oxide-based MOSFET structure to enable its operation. In this structure, the MOSFET is formed by an isolated, electrically insulating oxide layer on an arbitrary conductive surface. This oxide layer, which acts as a gate, allows only electrical current to flow through the FET when a voltage is applied to it. Otherwise, it remains in its non-conductive state.

The working principle of the SCT3080ALGC11 is fairly straightforward. When a voltage is applied to the gate of the FET, it acts as a forward bias and causes electrons to flow from the source to the drain. This gate voltage induces a gate-source voltage, which then controls the amount of current that can flow through the FET. This current is regulated by controlling the gate-source voltage, which can be adjusted with an external voltage source. There are several advantages to this design, including that it is capable of operating at lower voltages and currents than traditional switches, and offers superior switching performance.

The SCT3080ALGC11 is a versatile FET device that offers several advantages for a wide range of applications. Its low on-resistance and low gate charge ensure low voltage drops across the switch and higher efficiency, while its MOSFET-based design allows it to operate at low voltages and currents. The SCT3080ALGC11 also offers superior switching performance, making it an ideal choice for applications such as logic interface switches, DC to DC converters, home appliances, DC motor control, and charger control.

The specific data is subject to PDF, and the above content is for reference

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