
Allicdata Part #: | SCT3030KLGC11-ND |
Manufacturer Part#: |
SCT3030KLGC11 |
Price: | $ 39.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET NCH 1.2KV 72A TO247N |
More Detail: | N-Channel 1200V 72A (Tc) 339W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 15 |
1 +: | $ 35.47530 |
Vgs(th) (Max) @ Id: | 5.6V @ 13.3mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247N |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 339W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2222pF @ 800V |
Vgs (Max): | +22V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 131nC @ 18V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 27A, 18V |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SCT3030KLGC11 is a single N-channel MOSFET produced by Vishay Intertechnology, Inc. It offers excellent RDS(on) power ratings, eliminating the need for multiple MOSFET devices to produce the same peak current. Additionally, its low threshold voltage (VGS) means that this particular device can be easily driven with a moderate supply voltage.
This device is widely used in power management and motor driver applications, with applications including switching and power regulation. It can also be used in DC-DC converters, buck pre-regulators, and PFC boost stages. Additionally, the SCT3030KLGC11 is well-suited for a wide variety of audio applications, including high-power audio amplifiers and load switches.
The SCT3030KLGC11 uses a source-drain voltage of 30.5 V, with a maximum drain-source voltage (VDS) rating of 30 V. It can handle up to a continuous drain current (Id) of 3A, making it ideal for applications requiring a high level of current. Its RDS(on) rating of 296 milliohms is also very impressive, enabling it to easily handle the high current levels that may be encountered in some applications.
When it comes to the working principle of the SCT3030KLGC11, it is based on the metal-oxide-semiconductor structure (MOSFET). This particular device is a depletion-mode MOSFET, with a negative gate voltage (VGS) resulting in a conducted channel forming between the drain and the source terminals. When the VGS voltage exceeds the threshold voltage (VTH), the device switches on, allowing current to flow from the drain to the source. Conversely, lowering the gate voltage will cause the MOSFET to switch off, blocking any current flow.
Thanks to its impressive current handling capability, high power ratings, and low threshold voltage, the SCT3030KLGC11 is an incredibly versatile device and can serve very well in a variety of applications. As such, it continues to enjoy widespread use in numerous industries, including power management, motor control, and audio applications.
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