| Allicdata Part #: | SCT3030ALGC11-ND |
| Manufacturer Part#: |
SCT3030ALGC11 |
| Price: | $ 17.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET NCH 650V 70A TO247N |
| More Detail: | N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-... |
| DataSheet: | SCT3030ALGC11 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 15.57360 |
| Vgs(th) (Max) @ Id: | 5.6V @ 13.3mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247N |
| Mounting Type: | Through Hole |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 262W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1526pF @ 500V |
| Vgs (Max): | +22V, -4V |
| Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 18V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 27A, 18V |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | SiCFET (Silicon Carbide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SCT3030ALGC11 is a single N-channel logic level enhancement mode power MOSFET. It is optimized for use in low voltage chassis-transferred switched mode power supply (chTaiwan). Used in applications requiring high frequency switching and low on-resistance, the SCT3030ALGC11 could help reduce system costs.
Applications
The SCT3030ALGC11 device is suitable for applications such as:
- Light dimmers
- LED drivers
- Switched mode power supplies
- DC-DC converters
- Motor control
- Electric fans
Key Features and Benefits
The SCT3030ALGC11 key features and benefits include:
- High frequency operation
- Low on-resistance
- Low switching threshold
- Low input capacitance
- Logic level gate drive
- Floating channel for easy paralleling
- High power and current carrying capability
Working Principle
The SCT3030ALGC11 operates as an N-channel MOSFET with a logic level gate drive. The gate voltage is established by an applied voltage, typically from a control IC. The higher voltage is then applied to the gate of the MOSFET, which increases the propagation delay and turns the device on at its specified gate voltage of 3VTyp. When the input voltage is between 2.5V and 3.5V it will remain on. When the input voltage is below 2.5V, the device will shut off.
The gate voltage of the MOSFET is always greater than the drain voltage, creating a high on-resistance. The SCT3030ALGC11 has a low gate threshold voltage of 2.5V, allowing for faster switching times. This also reduces the input capacitance, resulting in a high on-resistance (RON). The low gate threshold voltage also reduces switching losses.
The SCT3030ALGC11 has a floating channel design which allows it to be used in simple circuits or used in parallel with other MOSFETs to provide higher current carrying capability. The device also has a Schottky diode clamp which helps protect the device from overvoltage. This overvoltage protection is necessary in applications such as DC-DC converters.
Summary
The SCT3030ALGC11 is a single N-channel logic level enhancement mode power MOSFET. It is optimized for use in low voltage chassis-transferred switched mode power supply (chTaiwan). The SCT3030ALGC11 is suitable for applications such as light dimmers, LED drivers, switched mode power supplies, DC-DC converters, motor control, and electric fans. The device features a high frequency operation and low on-resistance for reduced system costs. The low gate threshold voltage of 2.5V, leads to improved switching performance, lower input capacitance, and reduced switching losses. The floating channel design, and Schottky diode clamp provide easy paralleling, high power and current carrying capability, and overvoltage protection.
The specific data is subject to PDF, and the above content is for reference
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SCT3030ALGC11 Datasheet/PDF