SCT3030ALGC11 Allicdata Electronics
Allicdata Part #:

SCT3030ALGC11-ND

Manufacturer Part#:

SCT3030ALGC11

Price: $ 17.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET NCH 650V 70A TO247N
More Detail: N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-...
DataSheet: SCT3030ALGC11 datasheetSCT3030ALGC11 Datasheet/PDF
Quantity: 1000
1 +: $ 15.57360
Stock 1000Can Ship Immediately
$ 17.13
Specifications
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Package / Case: TO-247-3
Supplier Device Package: TO-247N
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 262W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V
Vgs (Max): +22V, -4V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V
Series: --
Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
Drive Voltage (Max Rds On, Min Rds On): 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SCT3030ALGC11 is a single N-channel logic level enhancement mode power MOSFET. It is optimized for use in low voltage chassis-transferred switched mode power supply (chTaiwan). Used in applications requiring high frequency switching and low on-resistance, the SCT3030ALGC11 could help reduce system costs.

Applications

The SCT3030ALGC11 device is suitable for applications such as:

  • Light dimmers
  • LED drivers
  • Switched mode power supplies
  • DC-DC converters
  • Motor control
  • Electric fans

Key Features and Benefits

The SCT3030ALGC11 key features and benefits include:

  • High frequency operation
  • Low on-resistance
  • Low switching threshold
  • Low input capacitance
  • Logic level gate drive
  • Floating channel for easy paralleling
  • High power and current carrying capability

Working Principle

The SCT3030ALGC11 operates as an N-channel MOSFET with a logic level gate drive. The gate voltage is established by an applied voltage, typically from a control IC. The higher voltage is then applied to the gate of the MOSFET, which increases the propagation delay and turns the device on at its specified gate voltage of 3VTyp. When the input voltage is between 2.5V and 3.5V it will remain on. When the input voltage is below 2.5V, the device will shut off.

The gate voltage of the MOSFET is always greater than the drain voltage, creating a high on-resistance. The SCT3030ALGC11 has a low gate threshold voltage of 2.5V, allowing for faster switching times. This also reduces the input capacitance, resulting in a high on-resistance (RON). The low gate threshold voltage also reduces switching losses.

The SCT3030ALGC11 has a floating channel design which allows it to be used in simple circuits or used in parallel with other MOSFETs to provide higher current carrying capability. The device also has a Schottky diode clamp which helps protect the device from overvoltage. This overvoltage protection is necessary in applications such as DC-DC converters.

Summary

The SCT3030ALGC11 is a single N-channel logic level enhancement mode power MOSFET. It is optimized for use in low voltage chassis-transferred switched mode power supply (chTaiwan). The SCT3030ALGC11 is suitable for applications such as light dimmers, LED drivers, switched mode power supplies, DC-DC converters, motor control, and electric fans. The device features a high frequency operation and low on-resistance for reduced system costs. The low gate threshold voltage of 2.5V, leads to improved switching performance, lower input capacitance, and reduced switching losses. The floating channel design, and Schottky diode clamp provide easy paralleling, high power and current carrying capability, and overvoltage protection.

The specific data is subject to PDF, and the above content is for reference

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