SCT3120ALGC11

Vgs(th) (Max) @ Id:	5.6V @ 3.33mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247N
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	103W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	460pF @ 500V
Vgs (Max):	+22V, -4V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 18V
Series:	--
Rds On (Max) @ Id, Vgs:	156 mOhm @ 6.7A, 18V
Drive Voltage (Max Rds On, Min Rds On):	18V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	SiCFET (Silicon Carbide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The SCT3120ALGC11 is a high-performance, low on-resistance, single N-channel, logic-level fleld-ef fect transistor (FET). It is designed for power supply and motor control applications where a low VGS(th) is necessary for generating proper gate drive signals. It is constructed by applying the latest trench process technology to the insulated gate transistor (IGT) process. This allows the device to achieve a higher performance, lower on-resistance, better dV/dt capability, and improved overall power density compared to the conventional E-mode MOSFETs.

Application Field

The SCT3120ALGC11 can handle a total gate charge of up to 2.6mA, making it ideal for a wide range of applications. It can be used to control power supplies, regulate DC-DC conversion, and provide short-circuit protection in motor drives. It is widely used in consumer power management applications like laptop adapters, tablets, and cellphones. It is also suitable for industrial motor drives, lighting applications, IGBT gate driver applications, and charging systems.

Working Principle

The SCT3120ALGC11 is a single N-channel MOSFET which uses Gate-Source voltage (GSV) to regulate the current flow from Drain to Source. The MOSFET consists of three terminals – gate, source and drain. When a voltage is applied to the gate, an electric field is created around the gate which draws the charges from the Source to the Drain. This reduces the resistance between the Drain and Source, thus allowing the flow of current. The amount of voltage required to create this electric field is known as the ‘threshold voltage’ or ‘gate threshold voltage’. The SCT3120ALGC11 has a low threshold voltage (VGS(th)) of -1V.The SCT3120ALGC11 has two major characteristics which are important parameters while operating the device. The first is the RDS (on) which is the on-resistance of the MOSFET. The lower the RDS(on), the better the device is for motor control applications since less power will be lost in the form of heat. The second characteristic is VGS(th) which is the Gate Threshold voltage. This is the voltage at which the device is switched on and the current passes through it. The low VGS(th) of the SCT3120ALGC11 allows for it to be used for generating proper gate drive signals.Another application of the SCT3120ALGC11 is its use as an IGBT gate driver. An IGBT is a three-terminal switching device used to control high-power circuits. An IGBT gate driver is used to provide the voltage and current necessary to switch the IGBT. The SCT3120ALGC11 can be used as an IGBT gate driver by setting it to a low VGS(th) (as stated above). This allows the device to handle currents up to 30A and switch very quickly, thus making it ideal for IGBT gate driver applications.

Conclusion

The SCT3120ALGC11 is a high-performance, low on-resistance, single N-channel logic-level FET. Its low VGS(th) and high gate charge capabilities make it an ideal device for power supply and motor control applications. It is also suitable for IGBT gate driver applications, making it a versatile and cost-effective choice.

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