
Allicdata Part #: | 497-14960-ND |
Manufacturer Part#: |
SCT30N120 |
Price: | $ 21.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1200V 45A HIP247 |
More Detail: | N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole Hi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 19.43550 |
30 +: | $ 17.12000 |
120 +: | $ 15.30730 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA (Typ) |
Package / Case: | TO-247-3 |
Supplier Device Package: | HiP247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Power Dissipation (Max): | 270W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 400V |
Vgs (Max): | +25V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 20A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SCT30N120 is a MOSFET produced by STMicroelectronics, a global semiconductor leader. It is classified as an N-Channel gate driver with a voltage rating of 30V, a drain current of 12A, and a continuous drain current of 10A. The device is suited for high-voltage applications and is also suitable for switching inductive loads as it has a maximum switch-on slope (dV/dt) of 2V/ns.
The application field of SCT30N120 covers a wide range of applications, from low-power DC/DC converters to high-power brushed motor control applications. It is ideal for motor control units (MCUs) and other shareable control application in automotive and industrial control systems thanks to its low on-resistance and high safe operating area.
The working principle of SCT30N120 is based on the traditional MOSFET technology, which uses an insulated-gate field-effect transistor (IGFET) to control the flow of electrical current in the device. It has a gate, drain and source that are connected to an electric field. By changing the application of the electric field, the current flow in the SCT30N120 can be controlled and regulated. When a voltage is applied to the gate terminal, the transistor will be "turned on" and the current will flow through the device. At the same time, the drain is connected to the load and the source is connected to ground. It is important to note that the application of too high a voltage on the gate can cause the transistor to be "over driven", triggering a condition known as "avalanche breakdown".
The SCT30N120 has a maximum on-state voltage rated at 15V, a maximum off-state voltage rated at < 30V, and a maximum channel temperature of 175°C. It also features an over-temperature protection circuit that can help to limit the dissipation power and reduce the temperature of the device. Additionally, the SCT30N120 is tested for both electrical and mechanical stress tests.
In conclusion, the SCT30N120 is a highly reliable, robust and efficient MOSFET from STMicroelectronics. It is suitable for a wide range of applications from low-power DC/DC converters to high-power brushed motor control applications, thanks to its low on-resistance and high safe operating area. Its working principle is based on the traditional MOSFET technology and it also features a number of additional protection features such as an over-temperature protection circuit and electrical and mechanical stress tests.
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